2023 conference paper
Advanced GaN IPM for High-Frequency Converter Applications Enabled with Thin-Substrates
2023 IEEE Applied Power Electronics Conference and Exposition (APEC). Presented at the 2023 IEEE Applied Power Electronics Conference and Exposition (APEC).
Event: 2023 IEEE Applied Power Electronics Conference and Exposition (APEC)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Crossref
Added: July 3, 2023
Extracting the potential of Wide Bandgap (WBG) semiconductor devices needs enhanced electrical and thermal packaging. This paper presents a half-bridge GaN-based Integrated Power Module (IPM) with inclusive gate drivers, driver caps, and decoupling caps for a 500kHz/0.8kW converter application. Presented are the design, fabrication, and experimental characterization of a dense, double-side cooled IPM utilizing an advanced epoxy-resin insulated metal substrate (eIMS) with 120µm thin dielectric for 400V/ 8.3ns high edge-rate switching (i.e. with $dv/dt$ of highest frequency of interest (HFI)). The common mode (CM) capacitance has been optimized. The thermal performance of the module was validated through ANSYS simulation, and the symmetry of the sandwiched substrate structure ensured for symmetric temperature distribution and stress management. An experimental Double Pulse Test (DPT) board with low isolation capacitance was developed to characterize the maximum dynamic performance. Finally, the CM effects on a full-bridge converter application are evaluated to show the efficacy of thin-substrate packaging for application at industrial power levels.