2001 journal article

Room temperature ferromagnetic properties of (Ga, Mn)N

APPLIED PHYSICS LETTERS, 79(21), 3473–3475.

By: M. Reed n, N. El-Masry n, H. Stadelmaier n, M. Ritums n, M. Reed n, C. Parker n, J. Roberts n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

Dilute magnetic semiconductor GaN with a Curie temperature above room temperature has been achieved by manganese doping. By varying the growth and annealing conditions of Mn-doped GaN we have identified Curie temperatures in the range of 228–370 K. These Mn-doped GaN films have ferromagnetic behavior with hysteresis curves showing a coercivity of 100–500 Oe. Structure characterization by x-ray diffraction and transmission electron microscopy indicated that the ferromagnetic properties are not a result of secondary magnetic phases.