2001 journal article

Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices

MATERIALS LETTERS, 51(6), 500–503.

By: M. Reed n, M. Ritums n, H. Stadelmaier n, M. Reed n, C. Parker n, S. Bedair n, N. El-Masry n

co-author countries: United States of America 🇺🇸
author keywords: magnetic; semiconductors; Ga-Mn-N
Source: Web Of Science
Added: August 6, 2018

A new dilute magnetic semiconductor (Ga,Mn)N grown by metal organic chemical vapor deposition (MOCVD) is reported. Vibrating sample magnetometer (VSM) and extraordinary Hall effect (EHE) measurements verified a ferromagnetic component at room temperature. The direction of the easy axis and the Curie temperature varies with the growth conditions, the latter ranging from 38°C to 75°C. Secondary ion mass spectroscopy (SIMS) confirms diffusion of Mn into the GaN to a depth of 380 Å.