2002 article

Direct fusion bonding of silicon to polycrystalline diamond

DIAMOND AND RELATED MATERIALS, Vol. 11, pp. 482–486.

By: S. Wolter n, G. Yushin n, F. Okuzumi n, B. Stoner, J. Prater* & Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: silicon-on-diamond; fusion bonding; diamond thin films
Source: Web Of Science
Added: August 6, 2018

High temperature fusion of silicon to diamond is reported. Polished, randomly oriented diamond films and unpolished (100) highly oriented diamond films were bonded to single-side polished (100) silicon in a dedicated ultrahigh vacuum bonding apparatus. Direct bonding under an applied uniaxial stress of ∼32 MPa was observed at temperatures above 950 °C. The bonded interface was examined by scanning acoustic microscopy revealing only partial bonding at fusion temperatures of 950 and 1050 °C. In contrast, complete bonding was evidenced at 1150 and 1200 °C, although cracking of the diamond films became more prominent at these higher fusion temperatures.