2024 article
FET Junction Temperature Monitoring Using Novel On-Chip Solution
2024 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, pp. 2475–2482.
author keywords: Bidirectional switches; SiC bidirectional FET; BiDFET; Junction Temperature; MOS Power devices; Silicon Carbide; Temperature sensing.
open access via www.osti.gov (repository)
Source: Web Of Science
Added: September 9, 2024
A novel junction temperature monitoring sensor is proposed and experimentally demonstrated for application in MOS-gate power devices. The sensor is created using the polycide gate electrode layer of the devices to create a temperature-sensitive resistor without any additional fabrication steps. The resistor is located on the field oxide with one end grounded at the device reference terminal to isolate it from the device current and voltage transients. It allows in-situ monitoring of the device junction temperature during active circuit operation. The technology has been implemented to monitor the junction temperature of Silicon Carbide Junction Barrier Schottky Field Effect Transistors (SiC JBSFETs) with the bi-directional FET (BiDFET).