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High-current, high-voltage AlN Schottky barrier diodes

Quinones, C. E., Khachariya, D., Reddy, P., Mita, S., Almeter, J., Bagheri, P., … Sitar, Z. (2024, October 1).

By: C. Quinones, D. Khachariya^*, P. Reddy^* , S. Mita^*, J. Almeter, P. Bagheri, S. Rathkanthiwar^*, R. Kirste^* ...and 4 other authors, including 3 NC State authors, S. Pavlidis^*, E. Kohn, R. Collazo^*  & Z. Sitar^*

10.35848/1882-0786/ad81c9

Find Text @ NCSU

open access via doi.org (publisher)

Source: Web Of Science

Added: November 4, 2024

Abstract AlN Schottky barrier diodes with low ideality factor (<1.2), high current density (>5 kA/cm 2 ), and high breakdown voltage (680 V) are reported. The quasi-vertical device structure consisted of a lightly-doped AlN drift layer and a heavily-doped Al 0.75 Ga 0.25 N ohmic contact layer grown on AlN substrates. A combination of simulation, current-voltage measurements, and impedance spectroscopy analysis revealed that the AlN/AlGaN interface introduces a parasitic electron barrier due to the conduction band offset between the two materials. We show that introducing a compositionally-graded layer reduces the interfacial barrier and increases the forward current density of fabricated diodes by a factor of 10 4 .