2004 journal article

Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between SiO2 and alternative gate dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 22(4), 2097–2104.

By: G. Lucovsky, J. Maria & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018