2004 journal article

Band-edge exciton states in AlN single crystals and epitaxial layers

APPLIED PHYSICS LETTERS, 85(19), 4334–4336.

By: L. Chen*, B. Skromme*, R. Dalmau n, R. Schlesser n, Z. Sitar n, C. Chen*, W. Sun*, J. Yang* ...

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

The band-edge excitonic properties of AlN are investigated using low-temperature (1.7K) optical reflectance and transmission measurements of samples with various crystal orientations. The A, B, and C excitons are found to have energies of 6.025, 6.243, and 6.257eV in unstrained material, which shift with strain. The results are compared to a calculation of exciton energies and oscillator strengths to yield a crystal-field splitting of −230meV in unstrained AlN, in good agreement with previous ab initio calculations.