2005 journal article

Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si(001)

APPLIED PHYSICS LETTERS, 86(20).

By: P. Sivasubramani*, M. Kim*, B. Gnade*, R. Wallace*, L. Edge*, D. Schlom*, H. Craft n, J. Maria n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

We have evaluated the thermal stability of Al2O3/LaAlO3/Si (001) stacks with atomic force microscopy, x-ray diffraction, transmission electron microscopy, and secondary ion mass spectrometry using a back side polishing approach. Crystallization of the amorphous LaAlO3 film was found to occur for rapid thermal anneals (RTA) above 935 °C for 20 s, in flowing N2. Penetration of Al and La into the underlying Si (001) is clearly observed for RTA at or above 950 °C for 20 s in flowing N2.