2019 journal article

Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs

IEEE ELECTRON DEVICE LETTERS, 40(5), 773–776.

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: 4H-SiC; 600 V; cell topologies; C-gd; hexagonal layout; linear layout; octagonal layout; planar MOSFET; Q(gd); R-on,R-sp; silicon carbide; square layout
Source: Web Of Science
Added: June 4, 2019

This letter compares the measured electrical characteristics of 600 V planar-gate inversion-channel 4H-SiC power MOSFETs fabricated with four different cell topologies (Linear, Square, Hexagonal, and Octagonal) for the first time. The High-Frequency Figures-of-Merit (HF-FOMs) of these devices were compared with the commercially available SiC device and the Si CoolMOS product. It was found that the HF-FOMs of the 600-V SiC product and our fabricated conventional Linear cell device are much worse in comparison to the Si CoolMOS product. However, the 600 V SiC power MOSFET with comparable performance to the Si CoolMOS product could be achieved by using the Octagonal cell topology.