2007 journal article

Magnetic and magnetotransport properties of (AlGaN/GaN): Mg/(GaMnN) heterostructures at room temperature

APPLIED PHYSICS LETTERS, 90(25).

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

Dilute magnetic semiconductor films (GaMnN) are highly resistive, making transport measurements difficult to achieve. However, when GaMnN films are sandwiched between p-type doped (AlGaN∕GaN) strained-layer superlattices, holes from the superlattice interact with the Mn3+∕2+ ions and transport measurements were realized. The authors have found also that the ferromagnetic properties of GaMnN critically depend on the level of p-type doping in the superlattice. They report anomalous Hall effect measurements in this (AlGaN∕GaN):Mg∕(GaMnN) multilayered structure. The current results also demonstrate the role of carriers, especially holes, in mediating the ferromagnetic properties of GaMnN dilute magnetic semiconductor films.