1999 article

Raman analysis and field emission study of ion beam etched diamond films

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 17, pp. 700–704.

By: M. Park n, D. McGregor n, L. Bergman n, R. Nemanich n, J. Hren n, J. Cuomo n, W. Choi*, . Zhirnov *

co-author countries: Korea (Republic of) πŸ‡°πŸ‡· Russian Federation πŸ‡·πŸ‡Ί United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

Discontinuous diamond films were deposited on silicon using a microwave plasma chemical vapor deposition system. The diamond deposits were sharpened by argon ion beam etching. Raman spectroscopy was carried out to study the structural change of the diamond after ion beam bombardment. It was found that amorphous sp2 carbon is produced as diamond is being sputtered by the Ar ion beam. The field emission turn-on field was also drastically lowered after sharpening, which, it is speculated, is caused by field enhancement due to change in geometry and/or structural changes (such as amorphization of crystalline diamond into graphitic or amorphous sp2 carbon) by Ar ion irradiation.