1999 journal article

Cubic GaN formation under nitrogen-deficient conditions

APPLIED PHYSICS LETTERS, 74(17), 2465–2467.

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

We have studied crystal structure and associated defects in GaN/α-Al2O3 (0001) films grown under nitrogen-deficient conditions by metalorganic chemical vapor deposition and pulsed laser deposition. N-deficient films exhibit polycrystalline structure with a mixture of cubic zinc-blende and wurtzite hexagonal GaN grains retaining tetragonal bonding across the boundaries and hence the epitaxial orientations and polarity. Renucleation of the wurtzite phase at different {111} planes of cubic GaN results in a rough and faceted surface of the film. We elucidate that the cubic phase is more stable under the nitrogen deficiency.