2010 journal article

Fast All-Transparent Integrated Circuits Based on Indium Gallium Zinc Oxide Thin-Film Transistors

IEEE ELECTRON DEVICE LETTERS, 31(4), 317–319.

By: A. Suresh, P. Wellenius n, V. Baliga n, H. Luo n, L. Lunardi n & J. Muth n

co-author countries: United States of America 🇺🇸
author keywords: Indium gallium zinc oxide (IGZO); oxide semiconductors; ring oscillators (ROs); thin-film transistors (TFTs); transparent circuits
Source: Web Of Science
Added: August 6, 2018

We describe the fabrication and characterization of visible transparent small-scale indium gallium zinc oxide (IGZO) integrated circuits. The IGZO channel and indium tin oxide (ITO) contacts and interconnects were pulsed laser deposited at room temperature. Low-temperature (200 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> C ) atomic-layer-deposited Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> was used as the gate dielectric in bottom-gated thin-film transistors with field-effect mobility near 15 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V·s. Logic inverters and ring oscillators were fabricated and characterized, with operations at frequencies as high as 2.1 MHz, corresponding to a propagation delay of less than 48 ns/stage with a supply voltage of 25 V. To the best of our knowledge, these are the fastest all-transparent oxide semiconductor circuits reported to date.