Fermi Level Control of Point Defects During Growth of Mg-Doped GaN
JOURNAL OF ELECTRONIC MATERIALS, 42(5), 815–819.
By: Z. Bryan n, M. Hoffmann n, J. Tweedie n, R. Kirste n, G. Callsen *, I. Bryan n, A. Rice n, M. Bobea n ..., S. Mita *, J. Xie*, Z. Sitar n & R. Collazo n
co-author countries:
Germany 🇩🇪 United States of America 🇺🇸
author keywords: Mg; GaN; UV excitation; Photoluminescence; Metal-organic chemical vapordeposition (MOCVD)