2014 | journal article

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Applied Physics Letters, 105(22).

By: Z. Bryan, I. Bryan, B. Gaddy, P. Reddy, L. Hussey, M. Bobea, W. Guo, M. Hoffmann ...

10.1063/1.4903058
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Source: NC State University Libraries