2021 article

3.3 kV 4H-SiC Planar-Gate MOSFETs Manufactured using Gen-5 PRESiCE (TM) Technology in a 4-inch Wafer Commercial Foundry

SOUTHEASTCON 2021, pp. 555–558.

By: A. Agarwal n, J. Baliga, M. Francois, E. Maxwell, N. Berliner & M. Papageorge

co-author countries: United States of America 🇺🇸
author keywords: 4H-SiC; Wide Band Gap Semiconductor Device Fabrication; Foundry; Power MOSFET; ACCUFET; INVFET
Source: Web Of Science
Added: September 13, 2021

The successful fabrication of 3.3 kV 4H-SiC Planar-Gate MOSFETs in a 4" commercial foundry using the Gen-5 PRESiCE™ technology is reported in this paper. Both Accumulation-channel MOSFETs (ACCUFETs) and Inversion-channel MOSFETs (INVFETs) were successfully manufactured. The electrical characteristics of the two types of fabricated devices are compared in this paper. The wafer yield data indicates that gate-source shorts were the yield-limiting criteria. This effort establishes a second source foundry for manufacturing SiC power devices in the United States.