2015 journal article
III-V Tunnel FET Model With Closed-Form Analytical Solution
IEEE TRANSACTIONS ON ELECTRON DEVICES, 63(5), 2163–2168.
author keywords: Band-to-band tunneling (BTBT); heterojunction; homojunction; lookup table; tunneling FET
open access via doi.org (publisher)
Source: Web Of Science
Added: August 6, 2018
Using an idealized semianalytical model of charge transport for InAs-based tunneling FET, it is shown that the output and transfer characteristics can be accurately reproduced and could be used to develop compact models. The use of a mathematical approximation for the analytical solution of the surface potential is vital here to minimize the computation time. The 20-nm gate homojunction and 40-nm gate heterojunction transistors have been simulated and compared with the calibrated numerical simulation results. The results are in good agreement.