2018 article

Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height

Jiang, Y., Sung, W., Baliga, J., Wang, S., Lee, B., & Huang, A. (2018, February). JOURNAL OF ELECTRONIC MATERIALS, Vol. 47, pp. 927–931.

By: Y. Jiang n, W. Sung *, J. Baliga n, S. Wang  n, B. Lee n & A. Huang n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: Silicon carbide; high voltage; Schottky barrier height; high-temperature electrical performance
Source: Web Of Science
Added: August 6, 2018