Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor
APPLIED PHYSICS EXPRESS, 16(3).
By: S. Stein n, D. Khachariya*, S. Mita*, M. Breckenridge n, J. Tweedie*, P. Reddy* , K. Sierakowski *, G. Kamler* ..., M. Bockowski *, E. Kohn n, Z. Sitar n, R. Collazo n & S. Pavlidis n
author keywords: GaN; JBS diode; Schottky contact; ultra-high-pressure-annealing; ideality factor; ion implantation; barrier height