2018 journal article

Molecular beam epitaxial growth of high quality Ga-catalyzed GaAs1-xSbx(x > 0.8) nanowires on Si (111) with photoluminescence emission reaching 1.7 mu m

Molecular beam epitaxial growth of high quality Ga-catalyzed GaAs1-xSbx(x > 0.8) nanowires on Si (111) with photoluminescence emission reaching 1.7 mu m. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 33(12).

By: P. Deshmukh, M. Sharma, S. Nalamati, C. Reynolds, Y. Liu & S. Iyer

Source: NC State University Libraries
Added: November 12, 2018