2019 article

Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

Liu, Z., Nitta, S., Robin, Y., Kushimoto, M., Deki, M., Honda, Y., … Amano, H. (2019, May 15). JOURNAL OF CRYSTAL GROWTH, Vol. 514, pp. 13–13.

co-author countries: Japan 🇯🇵 United States of America 🇺🇸
Source: Web Of Science
Added: April 2, 2019

• Low growth temperature, high growth rate increased vapor supersaturation. • Large miscut angle decreased surface supersaturation. • Decreasing surface supersaturation changed morphology from 2D islands to steps. • InGaN layer with steps had the highest internal quantum efficiency. • InGaN grown on GaN substrate more easily achieved a stepped morphology.