2020 article

600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V (vol 40, pg 1792, 2019)

Agarwal, A., Han, K., & Jayant Baliga, B. (2020, January). IEEE ELECTRON DEVICE LETTERS, Vol. 41, pp. 195–195.

By: A. Agarwal*, K. Han* & B. Jayant Baliga

author keywords: MOSFET; Silicon carbide; Logic gates; Silicon; Foundries; Insulated gate bipolar transistors; Object recognition
Source: Web Of Science
Added: February 3, 2020