2020 journal article

Hydride vapor phase epitaxy of Si -doped AlN layers using SiCl 4 as a doping gas

JOURNAL OF CRYSTAL GROWTH, 545.

By: R. Yamamoto, N. Takekawa, K. Goto, T. Nagashima, R. Dalmau, R. Schlesser, H. Murakami, R. Collazo ...

Source: Web Of Science
Added: July 6, 2020