High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing
APPLIED PHYSICS LETTERS, 118(2).
By: M. Breckenridge n, J. Tweedie, P. Reddy , Y. Guan, P. Bagheri, D. Szymanski, S. Mita, K. Sierakowski * ..., M. Bockowski *, R. Collazo & Z. Sitar
Source: Web Of Science
Added: February 15, 2021
