Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping
APPLIED PHYSICS LETTERS, 118(4).
By: S. Washiyama, K. Mirrielees, P. Bagheri, J. Baker, J. Kim, Q. Guo, R. Kirste, Y. Guan ..., M. Breckenridge, A. Klump, P. Reddy, S. Mita, D. Irving, R. Collazo, Z. Sitar
Source: Web Of Science
Added: March 29, 2021
