GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions
JOURNAL OF APPLIED PHYSICS.
By: D. Szymanski, D. Khachariya, T. Eldred, P. Bagheri, S. Washiyama, A. Chang, S. Pavlidis, R. Kirste ..., P. Reddy, E. Kohn, L. Lauhon, R. Collazo & Z. Sitar
Source: Web Of Science
Added: February 7, 2022
