2016 journal article

Cite it

III-V Tunnel FET Model With Closed-Form Analytical Solution

IEEE TRANSACTIONS ON ELECTRON DEVICES, 63(5), 2163–2168.

By: J. Mehta ⁿ, W. Borders  ⁿ, H. Liu^*, R. Pandey ^*, S. Datta ^* & L. Lunardi ⁿ 

author keywords: Band-to-band tunneling (BTBT); heterojunction; homojunction; lookup table; tunneling FET

10.1109/ted.2015.2471808

Find Text @ NCSU

doi.org (publisher)

Source: Web Of Science

Added: August 6, 2018

Using an idealized semianalytical model of charge transport for InAs-based tunneling FET, it is shown that the output and transfer characteristics can be accurately reproduced and could be used to develop compact models. The use of a mathematical approximation for the analytical solution of the surface potential is vital here to minimize the computation time. The 20-nm gate homojunction and 40-nm gate heterojunction transistors have been simulated and compared with the calibrated numerical simulation results. The results are in good agreement.