2022 journal article
Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices
APPLIED PHYSICS EXPRESS.
By: S. Rathkanthiwar, P. Bagheri, D. Khachariya, S. Mita, S. Pavlidis, P. Reddy, R. Kirste, J. Tweedie, Z. Sitar, R. Collazo
