2016 conference paper

Decomposition and electro-physical model creation of the CREE 1200V, 50A 3-Ph SiC module

Apec 2016 31st annual ieee applied power electronics conference and exposition, 2141–2146.

By: A. Morgan n, Y. Xu n, D. Hopkins n , I. Husain n & W. Yu n 

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: NC State University Libraries
Added: August 6, 2018

The CREE 1200V/50A, 25mΞ© 6-Pack SiC MOSFET module (CCS050M12CM2) is decomposed into a full 3D CAD model, and materials identified, for use in electrical circuit and multi-physics simulations. A reverse engineering technique is first developed, outlined, and then demonstrated on the CREE module. The ANSYS Q3D Extractor is applied to the 3D CAD model where electrical, lumped parameter, parasitic circuit elements are determined. The model is also analyzed with a multi-physics simulator to provide in-situ thermal maps of the baseplate surface for application scenarios, e.g. with a thermal interface material and pin fin heat sink to capture the thermal spreading from junction to case. The complete model is made open source and freely distributed for use by the reader.