2018 journal article

Impact of embedded voids on thin-films with high thermal expansion coefficients mismatch

APPLIED PHYSICS LETTERS, 112(4).

By: K. Khafagy *, T. Hatem* & S. Bedair n

co-author countries: Egypt πŸ‡ͺπŸ‡¬ United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

Using technology to reduce defects at heterogeneous interfaces of thin-films is at a high-priority for modern semiconductors. The current work utilizes a three-dimensional multiple-slip crystal-plasticity model and specialized finite-element formulations to study the impact of the embedded void approach (EVA) to reduce defects in thin-films deposited on a substrate with a highly mismatched thermal expansion coefficient, in particular, the growth of an InGaN thin-film on a Si substrate, where EVA has shown a remarkable reduction in stresses on the side of the embedded voids.