2018 journal article

Point-Defect Nature of the Ultraviolet Absorption Band in AIN

PHYSICAL REVIEW APPLIED, 9(5).

By: D. Alden n, J. Harris n, Z. Bryan n, J. Baker n, P. Reddy n, S. Mita*, G. Callsen*, A. Hoffmann* ...

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

The authors present an approach for identifying the point defects and defect complexes responsible for the technology-limiting absorption band in the UV-C range (100---280 nm), and the associated luminescence bands, in single-crystalline AlN. The approach employs analysis via density functional theory with the total-charge-balance constraint in the crystal, by incorporating impurity data from secondary-ion mass spectroscopy and power-dependent photoluminescence excitation spectroscopy, to determine the responsible defects and their thermodynamic transition levels. This methodology may help to solve a key problem in AlN-based optoelectronics, and could be extended to other materials.