Works (6)

Updated: July 5th, 2023 16:04

2011 article

Full Geometry Optimizations of Bond-Stretch Isomers of C202+Fullerene Dication by the Hybrid Density Functional B3LYP Methods

Lee, J.-H., Lee, C.-H., Park, S.-S., & Lee, K.-H. (2011, January 20). Bulletin of the Korean Chemical Society.

By: J. Lee*, C. Lee*, S. Park & K. Lee*

author keywords: Dipositive fullerene C-20(2+) ion; Bond-stretch isomers; Hybrid density functional (B3LYP) calculations; HOMO and LUMO
topics (OpenAlex): Fullerene Chemistry and Applications; Synthesis and Properties of Aromatic Compounds; Boron and Carbon Nanomaterials Research
Source: Web Of Science
Added: August 6, 2018

2004 article

A Capacitance-Based Methodology for Work Function Extraction of Metals on High-<tex>$kappa$</tex>

Jha, R., Gurganos, J., Kim, Y. H., Choi, R., Lee, J., & Misra, V. (2004, June 1). IEEE Electron Device Letters, Vol. 25, pp. 420–423.

By: R. Jha n, J. Gurganos n, Y. Kim*, R. Choi*, J. Lee* & V. Misra n

author keywords: dual-gate CMOS; Fermi-level pinning; gate electrodes; HfO2; high-kappa charges; metal gates; workfunction extraction
topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Integrated Circuits and Semiconductor Failure Analysis
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2004 article

Reliability of High-K Dielectrics and Its Dependence on Gate Electrode and Interfacial / High-K Bi-Layer Structure

Kim, Y. H., Choi, R., Jha, R., Lee, J. H., Misra, V., & Lee, J. C. (2004, September 1). Microelectronics Reliability, Vol. 44, pp. 1513–1518.

By: Y. Kim, R. Choi, R. Jha, J. Lee, V. Misra & J. Lee

topics (OpenAlex): Semiconductor materials and devices; Copper Interconnects and Reliability; Advancements in Semiconductor Devices and Circuit Design
TL;DR: The reliability of HfO 2 and how it depends on the barrier height and the nature of the bi-layer structure is presented and there is distinct bi-modal defect generation rate for high-k/SiO 2 stack. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2003 article

Effect of the composition on the electrical properties of TaSi/sub x/Ny metal gate electrodes

Suh, N. Y.-S., Heuss, G. P., Lee, N. J.-H., & Misra, V. (2003, July 1). IEEE Electron Device Letters, Vol. 24, pp. 439–441.

By: N. Suh n, G. Heuss n, N. Lee n & V. Misra n

author keywords: dual metal gates; gate Electrodes; low work function; MOS capacitors; N diffusion; TaSiN
topics (OpenAlex): Semiconductor materials and devices; Semiconductor materials and interfaces; Molecular Junctions and Nanostructures
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

1997 article

Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

Muth, J. F., Lee, J. H., Shmagin, I. K., Kolbas, R. M., Casey, H. C., Keller, B. P., … DenBaars, S. P. (1997, November 3). Applied Physics Letters.

By: J. Muth n, J. Lee n, I. Shmagin n, R. Kolbas n, H. Casey*, B. Keller*, U. Mishra*, S. DenBaars*

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Semiconductor materials and devices
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7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1997 article

Optical metastability in bulk GaN single crystals

Shmagin, I. K., Muth, J. F., Lee, J. H., Kolbas, R. M., Balkas, C. M., Sitar, Z., & Davis, R. F. (1997, July 28). Applied Physics Letters.

By: I. Shmagin n, J. Muth n, J. Lee n, R. Kolbas n, C. Balkas n, Z. Sitar n, R. Davis n

topics (OpenAlex): GaN-based semiconductor devices and materials; ZnO doping and properties; Ga2O3 and related materials
Source: Web Of Science
Added: August 6, 2018

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