Works (53)

2008 patent

Gallium nitride material structures including substrates and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

By: E. Piner, P. Rajagopal, J. Roberts & K. Linthicum

Source: NC State University Libraries
Added: August 6, 2018

2008 patent

Gallium nitride material transistors and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

By: W. Nagy, R. Borges, J. Brown, A. Chaudhari, J. Cook, A. Hanson, J. Johnson, K. Linthicum ...

Source: NC State University Libraries
Added: August 6, 2018

2008 patent

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2008 patent

Semiconductor device-based sensors

Washington, DC: U.S. Patent and Trademark Office.

By: J. Johnson, E. Piner & K. Linthicum

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Stimulated emission and lasing from an Al0.13Ga0.87N/GaN double heterostructure grown on a silicon substrate

Applied Physics Letters, 92(2).

By: F. Al-Ajmi, R. Kolbas, J. Roberts, P. Rajagopal, J. Cook, E. Piner, K. Linthicum

Source: NC State University Libraries
Added: August 6, 2018

2007 patent

Gallium nitride material devices and methods of forming the same

Washington, DC: U.S. Patent and Trademark Office.

By: T. Weeks & K. Linthicum

Source: NC State University Libraries
Added: August 6, 2018

2007 patent

Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches

Washington, DC: U.S. Patent and Trademark Office.

By: T. Zheleva, D. Thomson, S. Smith, K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2007 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate

Applied Physics Letters, 90(15).

Source: NC State University Libraries
Added: August 6, 2018

2006 patent

Gallium nitride material transistors and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

By: W. Nagy, R. Borges, J. Brown, A. Chaudhari, J. Cook, A. Hanson, J. Johnson, K. Linthicum ...

Source: NC State University Libraries
Added: August 6, 2018

2006 patent

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2005 patent

Gallium nitride materials including thermally conductive regions

Washington, DC: U.S. Patent and Trademark Office.

By: R. Borges, K. Linthicum, T. Weeks & T. Gehrke

Source: NC State University Libraries
Added: August 6, 2018

2005 patent

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2005 patent

Second gallium nitride layers that extend into trenches in first gallium nitride layers

Washington, DC: U.S. Patent and Trademark Office.

By: T. Zheleva, D. Thomson, S. Smith, K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2004 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Gallium nitride material devices and methods including backside vias

Washington, DC: U.S. Patent and Trademark Office.

By: T. Weeks, E. Piner, R. Borges & K. Linthicum

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Gallium nitride materials and methods

Washington, DC: U.S. Patent and Trademark Office.

By: T. Weeks, E. Piner, T. Gehrke & K. Linthicum

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Methods of fabricating gallium nitride microelectronic layers on silicon layers

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke, R. Davis, D. Thomson & K. Tracy

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum, R. Davis & D. Thomson

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke, D. Thomson, E. Carlson, P. Rajagopal & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions

Solid-State Electronics, 46(6), 827–835.

By: E. Danielsson, C. Zetterling, M. Ostling, K. Linthicum, D. Thomson, O. Nam, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates

Journal of Crystal Growth, 231(3), 335–341.

By: R. Davis, T. Gehrke, K. Linthicum, E. Preble, P. Rajagopal, C. Ronning, C. Zorman, M. Mehregany

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke, R. Davis, D. Thomson & K. Tracy

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: T. Zheleva, D. Thomson, S. Smith, K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Methods of forming a plurality of semiconductor layers using spaced trench arrays

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates

Zeitschrift Fur MetallkundeAmerican Journal of Physiology, 92(2), 163–166.

By: R. Davis, T. Gehrke, K. Linthicum, T. Zheleva, P. Rajagopal, C. Zorman, M. Mehregany

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization

Journal of Crystal Growth, 225(2-4), 134–140.

By: R. Davis, T. Gehrke, K. Linthicum, T. Zheleva, E. Preble, P. Rajagopal, C. Zorman, M. Mehregany

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates

MRS Internet Journal of Nitride Semiconductor Research, 6(14), 1–16.

By: R. Davis, T. Gehrke, K. Linthicum, P. Rajagopal, A. Roskowski, T. Zheleva, E. Preble, C. Zorman ...

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates

Solid-State Electronics, 44(4), 747–755.

By: H. Liaw, R. Doyle, P. Fejes, S. Zollner, A. Konkar, K. Linthicum, T. Gehrke, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Dry etching and metallization schemes in a GaN/SiC heterojunction device process

Materials Science Forum, 338(3), 1049–1052.

By: E. Danielsson, C. Zetterling, M. Ostling, S. Lee, K. Linthicum, D. Thomson, O. Nam, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films

Materials Science Forum, 338(3), 1471–1476.

By: R. Davis, O. Nam, T. Zheleva, T. Gehrke, K. Linthicum & P. Rajagopal

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U46–57.

By: R. Davis, T. Gehrke, K. Linthicum, T. Zheleva, P. Rajagopal, C. Zorman, M. Mehregany

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Pendeo-epitaxial growth of gallium nitride on silicon substrates

Journal of Electronic Materials, 29(3), 306–310.

By: T. Gehrke, K. Linthicum, E. Preble, P. Rajagopal, C. Ronning, C. Zorman, M. Mehregany, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

SiC MISFETs with MBE-grown AlN gate dielectric

Materials Science Forum, 338(3), 1315–1318.

By: C. Zetterling, M. Ostling, H. Yano, T. Kimoto, H. Matsunami, K. Linthicum, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Characterization of Be-implanted GaN annealed at high temperatures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17).

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.2).

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Pendeo-epitaxy of gallium nitride thin films

Applied Physics Letters, 75(2), 196–198.

By: K. Linthicum, T. Gehrke, D. Thomson, E. Carlson, P. Rajagopal, T. Smith, D. Batchelor, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 personal communication

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films

By: T. Zheleva, S. Smith, D. Thomson, K. Linthicum, P. Rajagopal & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38).

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.9).

By: K. Linthicum, T. Gehrke, D. Thomson, K. Tracy, E. Carlson, T. Smith, T. Zheleva, C. Zorman, M. Mehregany, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Ranges of deposition temperatures applicable for metalorganic vapor phase epitaxy of GaN films via the technique of pendeo- epitaxy

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.37).

By: D. Thomson, T. Gehrke, K. Linthicum, P. Rajagopal & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 61-2(1999 July 30), 320–324.

By: E. Danielsson, C. Zetterling, M. Ostling, B. Breitholtz, K. Linthicum, D. Thomson, O. Nam, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Biaxial strain in AlxGa1-xN/GaN layers deposited on 6H-SiC

Thin Solid Films, 324(1-2), 107–114.

By: W. Perry, M. Bremser, T. Zheleva, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Gas-source molecular beam epitaxy of III-V nitrides

Journal of Crystal Growth, 178(1/2), 87–101.

By: R. Davis, M. Paisley, Z. Sitar, D. Kester, K. Ailey, K. Linthicum, L. Rowland, S. Tanaka, R. Kern

Source: NC State University Libraries
Added: August 6, 2018