@misc{piner_rajagopal_roberts_linthicum_2008, title={Gallium nitride material structures including substrates and methods associated with the same}, volume={7,365,374}, number={2008 Apr. 29}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Piner, E. L. and Rajagopal, P. and Roberts, J. C. and Linthicum, K. J.}, year={2008} }
 @misc{nagy_borges_brown_chaudhari_cook_hanson_johnson_linthicum_piner_rajagopal_et al._2008, title={Gallium nitride material transistors and methods associated with the same}, volume={7,352,016}, number={2008 Apr. 1}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Nagy, W. H. and Borges, R. M. and Brown, J. D. and Chaudhari, A. D. and Cook, J. W. and Hanson, A. W. and Johnson, J. W. and Linthicum, K. J. and Piner, E. L. and Rajagopal, P. and et al.}, year={2008} }
 @misc{linthicum_gehrke_thomson_carlson_rajagopal_davis_2008, title={Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates}, volume={7,378,684}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Davis, R. F.}, year={2008} }
 @misc{johnson_piner_linthicum_2008, title={Semiconductor device-based sensors}, volume={7,361,946}, number={2008 Apr. 22}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Johnson, J. W. and Piner, E. L. and Linthicum, K. J.}, year={2008} }
 @article{al-ajmi_kolbas_roberts_rajagopal_cook_piner_linthicum_2008, title={Stimulated emission and lasing from an Al0.13Ga0.87N/GaN double heterostructure grown on a silicon substrate}, volume={92}, number={2}, journal={Applied Physics Letters}, author={Al-Ajmi, F. S. and Kolbas, R. M. and Roberts, J. C. and Rajagopal, P. and Cook, J. W. and Piner, E. L. and Linthicum, K. J.}, year={2008} }
 @misc{weeks_linthicum_2007, title={Gallium nitride material devices and methods of forming the same}, volume={7,233,028}, number={2007 Jun. 19}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Weeks, T. W. and Linthicum, K. J.}, year={2007} }
 @misc{zheleva_thomson_smith_linthicum_gehrke_davis_2007, title={Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches}, volume={7,195,993}, number={2007 Mar. 27}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Zheleva, T. and Thomson, D. B. and Smith, S. A. and Linthicum, K. J. and Gehrke, T. and Davis, R. F.}, year={2007} }
 @misc{gehrke_linthicum_davis_2007, title={Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby}, volume={7,217,641}, number={2007 May 15}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Gehrke, T. and Linthicum, K. J. and Davis, R. F.}, year={2007} }
 @article{al-ajmi_kolbas_roberts_rajagopal_cook_piner_linthicum_2007, title={Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate}, volume={90}, number={15}, journal={Applied Physics Letters}, author={Al-Ajmi, F. S. and Kolbas, R. M. and Roberts, J. C. and Rajagopal, P. and Cook, J. W. and Piner, E. L. and Linthicum, K. J.}, year={2007} }
 @misc{linthicum_gehrke_davis_2006, title={Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby}, volume={7,095,062}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Davis, R. F.}, year={2006} }
 @misc{borges_linthicum_weeks_gehrke_2005, title={Gallium nitride materials including thermally conductive regions}, volume={6,956,250}, number={2005 Oct. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Borges, R. and Linthicum, K. J. and Weeks, T. W. and Gehrke, T.}, year={2005} }
 @misc{linthicum_gehrke_davis_2005, title={Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts}, volume={6,864,160}, number={2005 Mar. 8}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Davis, R. F.}, year={2005} }
 @misc{zheleva_thomson_smith_linthicum_gehrke_davis_2005, title={Second gallium nitride layers that extend into trenches in first gallium nitride layers}, volume={6,897,483}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Zheleva, T. and Thomson, D. B. and Smith, S. A. and Linthicum, K. J. and Gehrke, T. and Davis, R. F.}, year={2005} }
 @misc{gehrke_linthicum_davis_2004, title={Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby}, volume={6,686,261}, number={2004 Feb. 3}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Gehrke, T. and Linthicum, K. J. and Davis, R. F.}, year={2004} }
 @misc{weeks_piner_borges_linthicum_2003, title={Gallium nitride material devices and methods including backside vias}, volume={6,611,002}, number={2003 Aug. 26}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Weeks, T. W. and Piner, E. L. and Borges, R. M. and Linthicum, K. J.}, year={2003} }
 @misc{weeks_piner_gehrke_linthicum_2003, title={Gallium nitride materials and methods}, volume={6,649,287}, number={2003 Nov. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Weeks, T. W. and Piner, E. L. and Gehrke, T. and Linthicum, K. J.}, year={2003} }
 @misc{linthicum_gehrke_davis_2003, title={Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts}, volume={6,586,778}, number={2003 July 1}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Davis, R. F.}, year={2003} }
 @misc{linthicum_gehrke_davis_thomson_tracy_2003, title={Methods of fabricating gallium nitride microelectronic layers on silicon layers}, volume={6,602,764}, number={2003 Aug. 5}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Davis, R. F. and Thomson, D. B. and Tracy, K. M.}, year={2003} }
 @misc{linthicum_gehrke_davis_2003, title={Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby}, volume={6,621,148}, number={2003 Sept. 16}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Davis, R. F.}, year={2003} }
 @misc{gehrke_linthicum_davis_2003, title={Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates}, volume={6,521,514}, number={2003 Feb. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Gehrke, T. and Linthicum, K. J. and Davis, R. F.}, year={2003} }
 @misc{gehrke_linthicum_davis_2003, title={Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby}, volume={6,545,300}, number={2003 Apr. 8}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Gehrke, T. and Linthicum, K. J. and Davis, R. F.}, year={2003} }
 @misc{gehrke_linthicum_davis_thomson_2002, title={High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates}, volume={6,489,221}, number={2002 Dec. 3}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Gehrke, T. and Linthicum, K. J. and Davis, R. F. and Thomson, D. B.}, year={2002} }
 @misc{linthicum_gehrke_davis_2002, title={Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts}, volume={6,403,451}, number={2002 Jun. 11}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Davis, R. F.}, year={2002} }
 @misc{gehrke_linthicum_davis_2002, title={Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby}, volume={6,486,042}, number={2002 Nov. 26}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Gehrke, T. and Linthicum, K. J. and Davis, R. F.}, year={2002} }
 @misc{linthicum_gehrke_thomson_carlson_rajagopal_davis_2002, title={Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates}, volume={6,462,355}, number={2002 Oct. 8}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Davis, R. F.}, year={2002} }
 @misc{linthicum_gehrke_thomson_carlson_rajagopal_davis_2002, title={Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby}, volume={6,376,339}, number={2002 Apr. 23}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Davis, R. F.}, year={2002} }
 @misc{linthicum_gehrke_davis_2002, title={Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby}, volume={6,380,108}, number={2002 Apr. 30}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Davis, R. F.}, year={2002} }
 @article{danielsson_zetterling_ostling_linthicum_thomson_nam_davis_2002, title={The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions}, volume={46}, ISSN={["1879-2405"]}, DOI={10.1016/S0038-1101(01)00346-X}, abstractNote={GaN/SiC heterojunctions can improve the performance considerably for bipolar transistors based on SiC technology. In order to fabricate such devices with a high current gain, the origin of the low turn-on voltage for the heterojunction has to be investigated, which is believed to decrease the minority carrier injection considerably. In this work heterojunction diodes are compared and characterized. For the investigated diodes, the GaN layers have been grown by molecular beam epitaxy (MBE), metal organic chemical vapor deposition, and hydride vapor phase epitaxy. A diode structure fabricated with MBE is presented here, whereas others are collected from previous publications. The layers were grown either with a low temperature buffer, AlN buffer, or without buffer layer. The extracted band offsets are compared and included in a model for a recombination process assisted by tunneling, which is proposed as explanation for the low turn-on voltage. This model was implemented in a device simulator and compared to the measured structures, with good agreement for the diodes with a GaN layer grown without buffer layer. In addition the band offset has been calculated from Schottky barrier measurements, resulting in a type II band alignment with a conduction band offset in the range 0.6–0.9 eV. This range agrees well with the values extracted from capacitance–voltage measurements.}, number={6}, journal={SOLID-STATE ELECTRONICS}, author={Danielsson, E and Zetterling, CM and Ostling, M and Linthicum, K and Thomson, DB and Nam, OH and Davis, RF}, year={2002}, month={Jun}, pages={827–835} }
 @article{davis_gehrke_linthicum_preble_rajagopal_ronning_zorman_mehregany_2001, title={Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates}, volume={231}, ISSN={["1873-5002"]}, DOI={10.1016/S0022-0248(01)01462-2}, abstractNote={Single-crystal wurtzitic GaN(0 0 0 1) films have been grown via conventional methods on high-temperature AlN(0 0 0 1) buffer layers previously deposited on 3C-SiC(1 1 1)/Si(1 1 1) substrates using metal organic vapor phase epitaxy (MOVPE). Formation of the 3C-SiC transition layer employed a carburization step and the subsequent deposition of epitaxial 3C-SiC(1 1 1) on the Si(1 1 1) surface using atmospheric pressure chemical vapor deposition (APCVD) for both processes. Similar films, except with significantly reduced dislocation densities, have been grown via pendeo-epitaxy (PE) from the (112̄0) sidewalls of silicon nitride masked, raised, rectangular, and [11̄00] oriented GaN stripes etched from films conventionally grown on similarly prepared, Si-based, multilayer substrates. The FWHM of the (0 0 0 2) X-ray diffraction peak of the conventionally grown GaN was 1443 arcsec. The FWHM of the photoluminescence (PL) spectra for the near band-edge emission on these films was 19 meV. Tilting in the coalesced PE-grown GaN epilayers of 0.2° was confined to the areas of lateral overgrowth over the masks; no tilting was observed in the material suspended above the trenches. The strong, low-temperature PL band-edge peak at 3.456 eV with an FWHM of 17 meV in the PE films was comparable to that observed in PE GaN films grown on AlN/6H-SiC(0 0 0 1) substrates.}, number={3}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Davis, RF and Gehrke, T and Linthicum, KJ and Preble, E and Rajagopal, P and Ronning, C and Zorman, C and Mehregany, M}, year={2001}, month={Oct}, pages={335–341} }
 @misc{linthicum_gehrke_davis_thomson_tracy_2001, title={Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby}, volume={6,255,198}, number={2001 July 3}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Davis, R. F. and Thomson, D. B. and Tracy, K. M.}, year={2001} }
 @misc{zheleva_thomson_smith_linthicum_gehrke_davis_2001, title={Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby}, volume={6,265,289}, number={2001 July 24}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Zheleva, T. and Thomson, D. B. and Smith, S. A. and Linthicum, K. J. and Gehrke, T. and Davis, R. F.}, year={2001} }
 @misc{gehrke_linthicum_davis_2001, title={Methods of forming a plurality of semiconductor layers using spaced trench arrays}, volume={6,261,929}, number={2001 July 17}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Gehrke, T. and Linthicum, K. J. and Davis, R. F.}, year={2001} }
 @article{davis_gehrke_linthicum_zheleva_rajagopal_zorman_mehregany_2001, title={Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates}, volume={92}, number={2}, journal={Zeitschrift fur MetallkundeAmerican Journal of Physiology}, author={Davis, R. F. and Gehrke, T. and Linthicum, K. J. and Zheleva, T. S. and Rajagopal, P. and Zorman, C. A. and Mehregany, M.}, year={2001}, pages={163–166} }
 @article{davis_gehrke_linthicum_zheleva_preble_rajagopal_zorman_mehregany_2001, title={Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization}, volume={225}, ISSN={["0022-0248"]}, DOI={10.1016/S0022-0248(01)00836-3}, abstractNote={Monocrystalline GaN and AlxGa1−xN films have been grown via the pendeo-epitaxy (PE)1 technique with and without Si3N4 masks on GaN/AlN/6H-SiC(0 0 0 1) and GaN(0 0 0 1)/AlN(0 0 0 1)/3C-SiC(1 1 1)/Si(1 1 1) substrates using organometallic vapor phase deposition. Scanning and transmission electron microscopies were used to evaluate the external microstructures and the distribution of dislocations, respectively. The dislocation densities in the PE grown films were reduced at least five orders of magnitude relative to the initial GaN seed layers. Tilting to 0.2° in the portion of the coalesced GaN epilayers grown over the silicon nitride masks was observed via X-ray diffraction. Neither tilting nor low angle boundaries were observed within areas of coalescence in the material grown on substrates without the masks. The strong, low-temperature PL band-edge peak at 3.45 eV with a FWHM of 17 meV was comparable to that observed in PE GaN films grown on 6H-SiC(0 0 0 1). The band-edge in the GaN grown on AlN(0 0 0 1)/SiC(1 1 1)Si(1 1 1) substrates was shifted to a lower energy by 10 meV, indicative of a greater tensile stress.}, number={2-4}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Davis, RF and Gehrke, T and Linthicum, KJ and Zheleva, TS and Preble, EA and Rajagopal, P and Zorman, CA and Mehregany, M}, year={2001}, month={May}, pages={134–140} }
 @misc{linthicum_gehrke_thomson_carlson_rajagopal_davis_2001, title={Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates}, volume={6,177,688}, number={2001 Jan. 23}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Davis, R. F.}, year={2001} }
 @article{davis_gehrke_linthicum_rajagopal_roskowski_zheleva_preble_zorman_mehregany_schwarz_et al._2001, title={Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates}, volume={6}, number={14}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Davis, R. F. and Gehrke, T. and Linthicum, K. J. and Rajagopal, P. and Roskowski, A. M. and Zheleva, T. and Preble, E. A. and Zorman, C. A. and Mehregany, M. and Schwarz, U. and et al.}, year={2001}, pages={1–16} }
 @article{liaw_doyle_fejes_zollner_konkar_linthicum_gehrke_davis_2000, title={Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates}, volume={44}, ISSN={["1879-2405"]}, DOI={10.1016/S0038-1101(99)00307-X}, abstractNote={The crystallinity and microstructures of MOCVD AlN films deposited on Si(111) substrates with and without a buffer layer(s) were determined. The buffer layers were a thin 3C–SiC(111) layer produced via conversion of a Si(111) surface and a film stack consisting of graded-AlxGa1−xN/GaN/3C–SiC. A randomly oriented polycrystalline AlN film was obtained when this material was deposited directly on the Si(111). The use of a buffer layer led to the growth and coalescence of highly oriented AlN films produced by the coalescence of grains having average misalignments along the c-axis of 1.8° and that on the c-plane of 3.3°. The grains exhibited strongly faceted tips. The 2H–AlN(0001) films grown on a 3C–SiC(111) buffer layers showed adequate crystal perfection for use as a template for growth of single-crystal GaN and/or AlxGa1−xN films.}, number={4}, journal={SOLID-STATE ELECTRONICS}, author={Liaw, HM and Doyle, R and Fejes, PL and Zollner, S and Konkar, A and Linthicum, KJ and Gehrke, T and Davis, RF}, year={2000}, month={Apr}, pages={747–755} }
 @article{danielsson_zetterling_ostling_lee_linthicum_thomson_nam_davis_2000, title={Dry etching and metallization schemes in a GaN/SiC heterojunction device process}, volume={338}, number={3}, journal={Materials Science Forum}, author={Danielsson, E. and Zetterling, C. M. and Ostling, M. and Lee, S. K. and Linthicum, K. J. and Thomson, D. B. and Nam, O. H. and Davis, R. F.}, year={2000}, pages={1049–1052} }
 @article{davis_nam_zheleva_gehrke_linthicum_rajagopal_2000, title={Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films}, volume={338}, number={3}, journal={Materials Science Forum}, author={Davis, R. F. and Nam, O. H. and Zheleva, T. S. and Gehrke, T. and Linthicum, K. J. and Rajagopal, P.}, year={2000}, pages={1471–1476} }
 @article{davis_gehrke_linthicum_zheleva_rajagopal_zorman_mehregany_2000, title={Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates}, volume={5}, number={2000}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Davis, R. F. and Gehrke, T. and Linthicum, K. J. and Zheleva, T. S. and Rajagopal, P. and Zorman, C. A. and Mehregany, M.}, year={2000}, pages={U46–57} }
 @article{gehrke_linthicum_preble_rajagopal_ronning_zorman_mehregany_davis_2000, title={Pendeo-epitaxial growth of gallium nitride on silicon substrates}, volume={29}, ISSN={["0361-5235"]}, DOI={10.1007/s11664-000-0068-6}, number={3}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Gehrke, T and Linthicum, KJ and Preble, E and Rajagopal, P and Ronning, C and Zorman, C and Mehregany, M and Davis, RF}, year={2000}, month={Mar}, pages={306–310} }
 @article{zetterling_ostling_yano_kimoto_matsunami_linthicum_davis_2000, title={SiC MISFETs with MBE-grown AlN gate dielectric}, volume={338}, number={3}, journal={Materials Science Forum}, author={Zetterling, C. M. and Ostling, M. and Yano, H. and Kimoto, T. and Matsunami, H. and Linthicum, K. and Davis, R. F.}, year={2000}, pages={1315–1318} }
 @article{ronning_linthicum_carlson_hartlieb_thomson_gehrke_davis_1999, title={Characterization of Be-implanted GaN annealed at high temperatures}, volume={4S1}, number={G3.17}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Ronning, C. and Linthicum, K. J. and Carlson, E. P. and Hartlieb, P. J. and Thomson, D. B. and Gehrke, T. and Davis, R. F.}, year={1999} }
 @article{gehrke_linthicum_thomson_rajagopal_batchelor_davis_1999, title={Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate}, volume={4S1}, number={G3.2}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Gehrke, T. and Linthicum, K. J. and Thomson, D. B. and Rajagopal, P. and Batchelor, A. D. and Davis, R. F.}, year={1999} }
 @article{linthicum_gehrke_thomson_carlson_rajagopal_smith_batchelor_davis_1999, title={Pendeo-epitaxy of gallium nitride thin films}, volume={75}, DOI={10.1063/1.124317}, abstractNote={Pendeoepitaxy, a form of selective lateral growth of GaN thin films has been developed using GaN/AlN/6H–SiC(0001) substrates and produced by organometallic vapor phase epitaxy. Selective lateral growth is forced to initiate from the (112̄0) GaN sidewalls of etched GaN seed forms by incorporating a silicon nitride seed mask and employing the SiC substrate as a pseudomask. Coalescence over and between the seed forms was achieved. Transmission electron microscopy revealed that all vertically threading defects stemming from the GaN/AlN and AlN/SiC interfaces are contained within the seed forms and a substantial reduction in the dislocation density of the laterally grown GaN. Atomic force microscopy analysis of the (112̄0) face of discrete pendeoepitaxial structures revealed a root mean square roughness of 0.98 Å. The pendeoepitaxial layer photoluminescence band edge emission peak was observed to be 3.454 eV and is blueshifted by 12 meV as compared to the GaN seed layer.}, number={2}, journal={Applied Physics Letters}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Smith, T. and Batchelor, D. and Davis, R.}, year={1999}, pages={196–198} }
 @misc{zheleva_smith_thomson_linthicum_rajagopal_davis_1999, title={Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films}, volume={28}, number={4}, journal={Journal of Electronic Materials}, author={Zheleva, T. S. and Smith, S. A. and Thomson, D. B. and Linthicum, K. J. and Rajagopal, P. and Davis, R. F.}, year={1999}, pages={L5–8} }
 @article{zheleva_smith_thomson_gehrke_linthicum_rajagopal_carlson_ashmawi_davis_1999, title={Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures}, volume={4S1}, number={G3.38}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Zheleva, T. S. and Smith, S. A. and Thomson, D. B. and Gehrke, T. and Linthicum, K. J. and Rajagopal, P. and Carlson, E. and Ashmawi, W. M. and Davis, R. F.}, year={1999} }
 @article{linthicum_gehrke_thomson_tracy_carlson_smith_zheleva_zorman_mehregany_davis_1999, title={Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques}, volume={4S1}, number={G4.9}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Tracy, K. M. and Carlson, E. P. and Smith, T. P. and Zheleva, T. S. and Zorman, C. A. and Mehregany, M. and Davis, R. F.}, year={1999} }
 @article{thomson_gehrke_linthicum_rajagopal_davis_1999, title={Ranges of deposition temperatures applicable for metalorganic vapor phase epitaxy of GaN films via the technique of pendeo- epitaxy}, volume={4S1}, number={G3.37}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Thomson, D. B. and Gehrke, T. and Linthicum, K. J. and Rajagopal, P. and Davis, R. F.}, year={1999} }
 @article{danielsson_zetterling_ostling_breitholtz_linthicum_thomson_nam_davis_1999, title={Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes}, volume={61-2}, number={1999 July 30}, journal={Materials Science & Engineering. B, Solid-state Materials for Advanced Technology}, author={Danielsson, E. and Zetterling, C. M. and Ostling, M. and Breitholtz, B. and Linthicum, K. and Thomson, D. B. and Nam, O. H. and Davis, R. F.}, year={1999}, pages={320–324} }
 @article{perry_bremser_zheleva_linthicum_davis_1998, title={Biaxial strain in AlxGa1-xN/GaN layers deposited on 6H-SiC}, volume={324}, ISSN={["0040-6090"]}, DOI={10.1016/S0040-6090(97)01217-0}, abstractNote={AlxGa1−xN/GaN multilayers (x≤0.12) deposited on AlN(0001) buffer layer/6H-SiC(0001) substrate combinations have been investigated using high resolution X-ray diffraction. Rocking curves (ω) showed that the AlxGa1−xN layers in the main contained a reduced dislocation density relative to the underlying GaN layers. The line widths of the radial scans (2θ−ω) of the AlxGa1−xN layers increased as the Al mole fraction increased due to alloy broadening. The in-plane lattice constant (a) of the AlxGa1−xN layer for each sample was equivalent to that of the GaN layer, indicating the layers were coherently strained. The strain in the AlGaN layer was tensile for each sample. This was determined using high-resolution reciprocal space maps of the (015) and (024) planes which revealed that the AlxGa1−xN and GaN lattice points had the same value of the in-plane components of the reciprocal lattice vector (S̄‖). For higher Al mole fractions, the samples were severely cracked, indicating the strain in the AlxGa1−xN layers exceeded critical values.}, number={1-2}, journal={THIN SOLID FILMS}, author={Perry, WG and Bremser, MB and Zheleva, T and Linthicum, KJ and Davis, RF}, year={1998}, month={Jul}, pages={107–114} }
 @article{davis_paisley_sitar_kester_ailey_linthicum_rowland_tanaka_kern_1997, title={Gas-source molecular beam epitaxy of III-V nitrides}, volume={178}, ISSN={["1873-5002"]}, DOI={10.1016/S0022-0248(97)00077-8}, abstractNote={Abstract Amorphous, hexagonal and cubic phases of BN were grown via ion beam assisted deposition on Si(1 0 0) substrates. Gas-source molecular beam epitaxy of the III–V nitrides is reviewed. Sapphire(0 0 0 1) is the most commonly employed substrate with 6H-SiC(0 0 0 1), ZnO(1 1 1) and Si(1 1 1) also being used primarily for the growth of wurtzite GaN(0 0 0 1) in tandem with previously deposited GaN(0 0 0 1) or AlN(0 0 0 1) buffer layers. Silicon(0 0 1), GaAs(0 0 1), GaP(0 0 1) and 3C-SiC(0 0 1) have been employed for growth of cubic (zincblende) β-GaN(0 0 1). The precursor materials are evaporated metals and reactive N species produced either via ECR or RF plasma decomposition of N2 or from ammonia. However, point defect damage from the plasma-derived species has resulted in a steady increase in the number of investigators now using ammonia. The growth temperatures for wurtzite GaN have increased from 650 ± 50°C to 800 ± 50°C to enhance the surface mobility of the reactants and, in turn, the efficiency of decomposition of ammonia and the microstructure and the growth rate of the films. Doping has been achieved primarily with Si (donor) and Mg (acceptor); the latter has been activated without post-growth annealing. Simple heterostructures, a p-n junction LED and a modulation-doped field-effect transistor have been achieved using GSMBE-grown material.}, number={1-2}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Davis, RF and Paisley, MJ and Sitar, Z and Kester, DJ and Ailey, KS and Linthicum, K and Rowland, LB and Tanaka, S and Kern, RS}, year={1997}, month={Jun}, pages={87–101} }