Kevin J. Linthicum Piner, E. L., Rajagopal, P., Roberts, J. C., & Linthicum, K. J. (2008). Gallium nitride material structures including substrates and methods associated with the same. Washington, DC: U.S. Patent and Trademark Office. Nagy, W. H., Borges, R. M., Brown, J. D., Chaudhari, A. D., Cook, J. W., Hanson, A. W., … Vescan, A. (2008). Gallium nitride material transistors and methods associated with the same. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2008). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. Washington, DC: U.S. Patent and Trademark Office. Johnson, J. W., Piner, E. L., & Linthicum, K. J. (2008). Semiconductor device-based sensors. Washington, DC: U.S. Patent and Trademark Office. Al-Ajmi, F. S., Kolbas, R. M., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., & Linthicum, K. J. (2008). Stimulated emission and lasing from an Al0.13Ga0.87N/GaN double heterostructure grown on a silicon substrate. Applied Physics Letters, 92(2). Weeks, T. W., & Linthicum, K. J. (2007). Gallium nitride material devices and methods of forming the same. Washington, DC: U.S. Patent and Trademark Office. Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2007). Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches. Washington, DC: U.S. Patent and Trademark Office. Gehrke, T., Linthicum, K. J., & Davis, R. F. (2007). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby. Washington, DC: U.S. Patent and Trademark Office. Al-Ajmi, F. S., Kolbas, R. M., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., & Linthicum, K. J. (2007). Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate. Applied Physics Letters, 90(15). Linthicum, K. J., Gehrke, T., & Davis, R. F. (2006). Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby. Washington, DC: U.S. Patent and Trademark Office. Borges, R., Linthicum, K. J., Weeks, T. W., & Gehrke, T. (2005). Gallium nitride materials including thermally conductive regions. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., & Davis, R. F. (2005). Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts. Washington, DC: U.S. Patent and Trademark Office. Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2005). Second gallium nitride layers that extend into trenches in first gallium nitride layers. Washington, DC: U.S. Patent and Trademark Office. Gehrke, T., Linthicum, K. J., & Davis, R. F. (2004). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby. Washington, DC: U.S. Patent and Trademark Office. Weeks, T. W., Piner, E. L., Borges, R. M., & Linthicum, K. J. (2003). Gallium nitride material devices and methods including backside vias. Washington, DC: U.S. Patent and Trademark Office. Weeks, T. W., Piner, E. L., Gehrke, T., & Linthicum, K. J. (2003). Gallium nitride materials and methods. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., & Davis, R. F. (2003). Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., Davis, R. F., Thomson, D. B., & Tracy, K. M. (2003). Methods of fabricating gallium nitride microelectronic layers on silicon layers. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., & Davis, R. F. (2003). Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby. Washington, DC: U.S. Patent and Trademark Office. Gehrke, T., Linthicum, K. J., & Davis, R. F. (2003). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates. Washington, DC: U.S. Patent and Trademark Office. Gehrke, T., Linthicum, K. J., & Davis, R. F. (2003). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby. Washington, DC: U.S. Patent and Trademark Office. Gehrke, T., Linthicum, K. J., Davis, R. F., & Thomson, D. B. (2002). High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., & Davis, R. F. (2002). Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts. Washington, DC: U.S. Patent and Trademark Office. Gehrke, T., Linthicum, K. J., & Davis, R. F. (2002). Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2002). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2002). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., & Davis, R. F. (2002). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby. Washington, DC: U.S. Patent and Trademark Office. Danielsson, E., Zetterling, C. M., Ostling, M., Linthicum, K., Thomson, D. B., Nam, O. H., & Davis, R. F. (2002). The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions. SOLID-STATE ELECTRONICS, 46(6), 827–835. https://doi.org/10.1016/S0038-1101(01)00346-X Davis, R. F., Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., … Mehregany, M. (2001, October). Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates. JOURNAL OF CRYSTAL GROWTH, Vol. 231, pp. 335–341. https://doi.org/10.1016/S0022-0248(01)01462-2 Linthicum, K. J., Gehrke, T., Davis, R. F., Thomson, D. B., & Tracy, K. M. (2001). Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby. Washington, DC: U.S. Patent and Trademark Office. Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2001). Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby. Washington, DC: U.S. Patent and Trademark Office. Gehrke, T., Linthicum, K. J., & Davis, R. F. (2001). Methods of forming a plurality of semiconductor layers using spaced trench arrays. Washington, DC: U.S. Patent and Trademark Office. Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Rajagopal, P., Zorman, C. A., & Mehregany, M. (2001). Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates. Zeitschrift Fur MetallkundeAmerican Journal of Physiology, 92(2), 163–166. Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Preble, E. A., Rajagopal, P., … Mehregany, M. (2001, May). Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization. JOURNAL OF CRYSTAL GROWTH, Vol. 225, pp. 134–140. https://doi.org/10.1016/S0022-0248(01)00836-3 Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2001). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. Washington, DC: U.S. Patent and Trademark Office. Davis, R. F., Gehrke, T., Linthicum, K. J., Rajagopal, P., Roskowski, A. M., Zheleva, T., … Grober, R. (2001). Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates. MRS Internet Journal of Nitride Semiconductor Research, 6(14), 1–16. Liaw, H. M., Doyle, R., Fejes, P. L., Zollner, S., Konkar, A., Linthicum, K. J., … Davis, R. F. (2000). Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates. SOLID-STATE ELECTRONICS, 44(4), 747–755. https://doi.org/10.1016/S0038-1101(99)00307-X Danielsson, E., Zetterling, C. M., Ostling, M., Lee, S. K., Linthicum, K. J., Thomson, D. B., … Davis, R. F. (2000). Dry etching and metallization schemes in a GaN/SiC heterojunction device process. Materials Science Forum, 338(3), 1049–1052. Davis, R. F., Nam, O. H., Zheleva, T. S., Gehrke, T., Linthicum, K. J., & Rajagopal, P. (2000). Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films. Materials Science Forum, 338(3), 1471–1476. Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Rajagopal, P., Zorman, C. A., & Mehregany, M. (2000). Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates. MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U46–57. Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., Zorman, C., … Davis, R. F. (2000). Pendeo-epitaxial growth of gallium nitride on silicon substrates. JOURNAL OF ELECTRONIC MATERIALS, 29(3), 306–310. https://doi.org/10.1007/s11664-000-0068-6 Zetterling, C. M., Ostling, M., Yano, H., Kimoto, T., Matsunami, H., Linthicum, K., & Davis, R. F. (2000). SiC MISFETs with MBE-grown AlN gate dielectric. Materials Science Forum, 338(3), 1315–1318. Ronning, C., Linthicum, K. J., Carlson, E. P., Hartlieb, P. J., Thomson, D. B., Gehrke, T., & Davis, R. F. (1999). Characterization of Be-implanted GaN annealed at high temperatures. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17). Gehrke, T., Linthicum, K. J., Thomson, D. B., Rajagopal, P., Batchelor, A. D., & Davis, R. F. (1999). Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.2). Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., Smith, T., … Davis, R. (1999). Pendeo-epitaxy of gallium nitride thin films. Applied Physics Letters, 75(2), 196–198. https://doi.org/10.1063/1.124317 Zheleva, T. S., Smith, S. A., Thomson, D. B., Linthicum, K. J., Rajagopal, P., & Davis, R. F. (1999). Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films. Zheleva, T. S., Smith, S. A., Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., … Davis, R. F. (1999). Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38). Linthicum, K. J., Gehrke, T., Thomson, D. B., Tracy, K. M., Carlson, E. P., Smith, T. P., … Davis, R. F. (1999). Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.9). Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., & Davis, R. F. (1999). Ranges of deposition temperatures applicable for metalorganic vapor phase epitaxy of GaN films via the technique of pendeo- epitaxy. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.37). Danielsson, E., Zetterling, C. M., Ostling, M., Breitholtz, B., Linthicum, K., Thomson, D. B., … Davis, R. F. (1999). Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes. Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 61-2(1999 July 30), 320–324. Perry, W. G., Bremser, M. B., Zheleva, T., Linthicum, K. J., & Davis, R. F. (1998). Biaxial strain in AlxGa1-xN/GaN layers deposited on 6H-SiC. THIN SOLID FILMS, 324(1-2), 107–114. https://doi.org/10.1016/S0040-6090(97)01217-0 Davis, R. F., Paisley, M. J., Sitar, Z., Kester, D. J., Ailey, K. S., Linthicum, K., … Kern, R. S. (1997). Gas-source molecular beam epitaxy of III-V nitrides. JOURNAL OF CRYSTAL GROWTH, 178(1-2), 87–101. https://doi.org/10.1016/S0022-0248(97)00077-8