Works (9)

Updated: July 5th, 2023 16:04

1999 journal article

High optical quality AlInGaN by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS, 75(21), 3315–3317.

By: M. Aumer n, S. LeBoeuf n, F. McIntosh n & S. Bedair n

Source: Web Of Science
Added: August 6, 2018

1998 patent

Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flow

Washington, DC: U.S. Patent and Trademark Office.

By: F. McIntosh, S. Bedair, N. El-Masry & J. Roberts

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Effect of hydrogen on the indium incorporation in InGaN epitaxial films

APPLIED PHYSICS LETTERS, 70(4), 461–463.

By: E. Piner n, M. Behbehani n, N. ElMasry n, F. McIntosh n, J. Roberts n, K. Boutros n, S. Bedair n

Source: Web Of Science
Added: August 6, 2018

1997 article

Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system

McIntosh, F. G., Piner, E. L., Roberts, J. C., Behbehani, M. K., Aumer, M. E., ElMasry, N. A., & Bedair, S. M. (1997, March). APPLIED SURFACE SCIENCE, Vol. 112, pp. 98–101.

By: F. McIntosh*, E. Piner, J. Roberts*, M. Behbehani*, M. Aumer*, N. ElMasry, S. Bedair*

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Growth and characterization of In-based nitride compounds

JOURNAL OF CRYSTAL GROWTH, 178(1-2), 32–44.

By: S. Bedair n, F. McIntosh n, J. Roberts n, E. Piner n, K. Boutros* & N. ElMasry n

author keywords: InGaN; ALE; MOCVD; quantum wells; growth model
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films

APPLIED PHYSICS LETTERS, 71(14), 2023–2025.

By: E. Piner n, M. Behbehani n, N. ElMasry n, J. Roberts n, F. McIntosh n & S. Bedair n

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Optical memory effect in GaN epitaxial films

APPLIED PHYSICS LETTERS, 71(2), 234–236.

By: V. Joshkin n, J. Roberts n, F. McIntosh n, S. Bedair n, E. Piner n & M. Behbehani n

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Optical transitions in InGaN/AlGaN single quantum wells

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1139–1143.

By: K. Zeng, M. Smith, J. Lin, H. Jiang, J. Roberts, E. Piner, F. McIntosh

Source: NC State University Libraries
Added: August 6, 2018

1997 patent

Stacked quantum well aluminum indium gallium nitride light emitting diodes

Washington, DC: U.S. Patent and Trademark Office.

By: F. McIntosh, S. Bedair, N. El-Masry & J. Roberts

Source: NC State University Libraries
Added: August 6, 2018