Works (9)

1999 journal article

High optical quality AlInGaN by metalorganic chemical vapor deposition

Applied Physics Letters, 75(21), 3315–3317.

By: M. Aumer, S. Leboeuf, F. McIntosh & S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

1998 patent

Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flow

Washington, DC: U.S. Patent and Trademark Office.

By: F. McIntosh, S. Bedair, N. El-Masry & J. Roberts

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Effect of hydrogen on the indium incorporation in ingan epitaxial films

Applied Physics Letters, 70(4), 461–463.

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Epitaxial deposition of gainn and inn using the rotating susceptor ale system

Applied Surface Science, 112(1997 Mar.), 98–101.

By: F. McIntosh, E. Piner, J. Roberts, M. Behbehani, M. Aumer, N. El-Masry, S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Growth and characterization of in-based nitride compounds

Journal of Crystal Growth, 178(1-2), 32–44.

By: S. Bedair, F. McIntosh, J. Roberts, E. Piner, K. Boutros & E. A.

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films

Applied Physics Letters, 71(14), 2023–2025.

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Optical memory effect in GaN epitaxial films

Applied Physics Letters, 71(2), 234–236.

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Optical transitions in InGaN/AlGaN single quantum wells

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1139–1143.

By: K. Zeng, M. Smith, J. Lin, H. Jiang, J. Roberts, E. Piner, F. McIntosh

Source: NC State University Libraries
Added: August 6, 2018

1997 patent

Stacked quantum well aluminum indium gallium nitride light emitting diodes

Washington, DC: U.S. Patent and Trademark Office.

By: F. McIntosh, S. Bedair, N. El-Masry & J. Roberts

Source: NC State University Libraries
Added: August 6, 2018