Forrest G. McIntosh

Works (9)

Updated: March 10th, 2025 12:14

1999 article

High optical quality AlInGaN by metalorganic chemical vapor deposition

Aumer, M. E., LeBoeuf, S. F., McIntosh, F. G., & Bedair, S. M. (1999, November 22). Applied Physics Letters.

By: M. Aumer n, S. LeBoeuf n, F. McIntosh n & S. Bedair n

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Acoustic Wave Resonator Technologies
Source: Web Of Science
Added: August 6, 2018

1998 patent

Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flow

Washington, DC: U.S. Patent and Trademark Office.

By: F. McIntosh, S. Bedair, N. El-Masry & J. Roberts

Source: NC State University Libraries
Added: August 6, 2018

1997 article

Effect of hydrogen on the indium incorporation in InGaN epitaxial films

Piner, E. L., Behbehani, M. K., El-Masry, N. A., McIntosh, F. G., Roberts, J. C., Boutros, K. S., & Bedair, S. M. (1997, January 27). Applied Physics Letters.

By: E. Piner n, M. Behbehani n, N. El-Masry n, F. McIntosh n, J. Roberts n, K. Boutros n, S. Bedair n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1997 article

Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system

McIntosh, F. G., Piner, E. L., Roberts, J. C., Behbehani, M. K., Aumer, M. E., El-Masry, N. A., & Bedair, S. M. (1997, March 1). Applied Surface Science.

By: F. McIntosh n, E. Piner  n, J. Roberts n, M. Behbehani n, M. Aumer n, N. El-Masry n, S. Bedair n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Acoustic Wave Resonator Technologies
Source: Web Of Science
Added: August 6, 2018

1997 article

Growth and characterization of In-based nitride compounds

Bedair, S. M., McIntosh, F. G., Roberts, J. C., Piner, E. L., Boutros, K. S., & El-Masry, N. A. (1997, June 1). Journal of Crystal Growth.

By: S. Bedair n, F. McIntosh n, J. Roberts n, E. Piner n, K. Boutros* & N. El-Masry n

author keywords: InGaN; ALE; MOCVD; quantum wells; growth model
topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Semiconductor Quantum Structures and Devices
Source: Web Of Science
Added: August 6, 2018

1997 article

Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films

Piner, E. L., Behbehani, M. K., El-Masry, N. A., Roberts, J. C., McIntosh, F. G., & Bedair, S. M. (1997, October 6). Applied Physics Letters.

By: E. Piner n, M. Behbehani n, N. El-Masry n, J. Roberts n, F. McIntosh n & S. Bedair n

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Semiconductor materials and devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1997 article

Optical memory effect in GaN epitaxial films

Joshkin, V. A., Roberts, J. C., McIntosh, F. G., Bedair, S. M., Piner, E. L., & Behbehani, M. K. (1997, July 14). Applied Physics Letters.

By: V. Joshkin n, J. Roberts n, F. McIntosh n, S. Bedair n, E. Piner n & M. Behbehani n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Spectroscopy and Laser Applications
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Optical transitions in InGaN/AlGaN single quantum wells

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1139–1143.

By: K. Zeng, M. Smith, J. Lin, H. Jiang, J. Roberts, E. Piner, F. McIntosh

Source: NC State University Libraries
Added: August 6, 2018

1997 patent

Stacked quantum well aluminum indium gallium nitride light emitting diodes

Washington, DC: U.S. Patent and Trademark Office.

By: F. McIntosh, S. Bedair, N. El-Masry & J. Roberts

Source: NC State University Libraries
Added: August 6, 2018

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