Works (9)
Updated: August 16th, 2024 13:37
1999 journal article
High optical quality AlInGaN by metalorganic chemical vapor deposition
APPLIED PHYSICS LETTERS, 75(21), 3315–3317.
Source: Web Of Science
Added: August 6, 2018
1998 patent
Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flow
Washington, DC: U.S. Patent and Trademark Office.
Source: NC State University Libraries
Added: August 6, 2018
1997 journal article
Effect of hydrogen on the indium incorporation in InGaN epitaxial films
APPLIED PHYSICS LETTERS, 70(4), 461–463.
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
1997 article
Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system
McIntosh, F. G., Piner, E. L., Roberts, J. C., Behbehani, M. K., Aumer, M. E., ElMasry, N. A., & Bedair, S. M. (1997, March). APPLIED SURFACE SCIENCE, Vol. 112, pp. 98–101.
Source: Web Of Science
Added: August 6, 2018
1997 journal article
Growth and characterization of In-based nitride compounds
JOURNAL OF CRYSTAL GROWTH, 178(1-2), 32–44.
author keywords: InGaN; ALE; MOCVD; quantum wells; growth model
Source: Web Of Science
Added: August 6, 2018
1997 journal article
Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films
APPLIED PHYSICS LETTERS, 71(14), 2023–2025.
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
1997 journal article
Optical memory effect in GaN epitaxial films
APPLIED PHYSICS LETTERS, 71(2), 234–236.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
1997 journal article
Optical transitions in InGaN/AlGaN single quantum wells
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1139–1143.
Source: NC State University Libraries
Added: August 6, 2018
1997 patent
Stacked quantum well aluminum indium gallium nitride light emitting diodes
Washington, DC: U.S. Patent and Trademark Office.
Source: NC State University Libraries
Added: August 6, 2018
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