Forrest G. McIntosh

Aumer, M. E., LeBoeuf, S. F., McIntosh, F. G., & Bedair, S. M. (1999). High optical quality AlInGaN by metalorganic chemical vapor deposition. APPLIED PHYSICS LETTERS, 75(21), 3315–3317. https://doi.org/10.1063/1.125336

McIntosh, F. G., Bedair, S. M., El-Masry, N. A., & Roberts, J. C. (1998). Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flow. Washington, DC: U.S. Patent and Trademark Office.

Piner, E. L., Behbehani, M. K., ElMasry, N. A., McIntosh, F. G., Roberts, J. C., Boutros, K. S., & Bedair, S. M. (1997). Effect of hydrogen on the indium incorporation in InGaN epitaxial films. APPLIED PHYSICS LETTERS, 70(4), 461–463. https://doi.org/10.1063/1.118181

McIntosh, F. G., Piner, E. L., Roberts, J. C., Behbehani, M. K., Aumer, M. E., ElMasry, N. A., & Bedair, S. M. (1997, March). Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system. APPLIED SURFACE SCIENCE, Vol. 112, pp. 98–101. https://doi.org/10.1016/S0169-4332(96)00992-0

Bedair, S. M., McIntosh, F. G., Roberts, J. C., Piner, E. L., Boutros, K. S., & ElMasry, N. A. (1997). Growth and characterization of In-based nitride compounds. JOURNAL OF CRYSTAL GROWTH, 178(1-2), 32–44. https://doi.org/10.1016/S0022-0248(97)00069-9

Piner, E. L., Behbehani, M. K., ElMasry, N. A., Roberts, J. C., McIntosh, F. G., & Bedair, S. M. (1997). Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films. APPLIED PHYSICS LETTERS, 71(14), 2023–2025. https://doi.org/10.1063/1.119775

Joshkin, V. A., Roberts, J. C., McIntosh, F. G., Bedair, S. M., Piner, E. L., & Behbehani, M. K. (1997). Optical memory effect in GaN epitaxial films. APPLIED PHYSICS LETTERS, 71(2), 234–236. https://doi.org/10.1063/1.120414

Zeng, K. C., Smith, M., Lin, J. Y., Jiang, H. X., Roberts, J. C., Piner, E. L., & McIntosh, F. G. (1997). Optical transitions in InGaN/AlGaN single quantum wells. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1139–1143.

McIntosh, F. G., Bedair, S. M., El-Masry, N. A., & Roberts, J. C. (1997). Stacked quantum well aluminum indium gallium nitride light emitting diodes. Washington, DC: U.S. Patent and Trademark Office.