Nikolaus Dietz

Kirste, R., Wagner, M. R., Schulze, J. H., Strittmatter, A., Collazo, R., Sitar, Z., … Hoffmann, A. (2010). Optical properties of InN grown on templates with controlled surface polarities. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(10), 2351–2354. https://doi.org/10.1002/pssa.201026086

Narayanan, V., Mahajan, S., Bachmann, K. J., Woods, V., & Dietz, N. (2002). Antiphase boundaries in GaP layers grown on (001) Si by chemical beam epitaxy. ACTA MATERIALIA, 50(6), 1275–1287. https://doi.org/10.1016/S1359-6454(01)00408-6

Blickle, V., Flock, K., Dietz, N., & Aspnes, D. E. (2002). Pseudodielectric function of ZnGeP2 from 1.5 to 6 eV. APPLIED PHYSICS LETTERS, 81(4), 628–630. https://doi.org/10.1063/1.1492022

Narayanan, V., Mahajan, S., Bachmann, K. J., Woods, V., & Dietz, N. (2002). Stacking faults and twins in gallium phosphide layers grown on silicon. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 82(4), 685–698. https://doi.org/10.1080/01418610110082034

Dietz, N., Beeler, S. C., Schmidt, J. W., & Tran, H. T. (2001). Surface reaction kinetics of Ga1-xInxP growth during pulsed chemical beam epitaxy. APPLIED SURFACE SCIENCE, 178(1-4), 63–74. https://doi.org/10.1016/S0169-4332(01)00302-6

Dimmock, J. O., Madarasz, F. L., Dietz, N., & Bachmann, K. J. (2001). Theoretical analysis of phase-matched second-harmonic generation and optical parametric oscillation in birefringent semiconductor waveguides. APPLIED OPTICS, 40(9), 1438–1441. https://doi.org/10.1364/AO.40.001438

Narayanan, V., Mahajan, S., Sukidi, N., Bachmann, K. J., Woods, V., & Dietz, N. (2000). Orientation mediated self-assembled gallium phosphide islands grown on silicon. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 80(3), 555–572. https://doi.org/10.1080/01418610008212068

Woods, V., Dietz, N., Ito, K., & Lauko, I. (2000). Real-time thickness and compositional control of Ga1-xInxP growth using p-polarized reflectance. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 18, pp. 1190–1195. https://doi.org/10.1116/1.582469

Madarasz, F. L., Dimmock, J. O., Dietz, N., & Bachmann, K. J. (2000). Sellmeier parameters for ZnGaP2 and GaP. JOURNAL OF APPLIED PHYSICS, 87(3), 1564–1565. https://doi.org/10.1063/1.372050

Madarasz, F. L., Dimmock, J. O., Dietz, N., & Bachmann, K. J. (2000, May 15). Sellmeier parameters for ZnGaP2 and GaP (vol 87, pg 1564, 2000). JOURNAL OF APPLIED PHYSICS, Vol. 87, pp. 7597–7597. https://doi.org/10.1063/1.373029

Dietz, N., Woods, V., Ito, K., & Lauko, I. (1999). Real-time optical control of Ga1-xInxP film growth by p-polarized reflectance. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 17, pp. 1300–1306. https://doi.org/10.1116/1.581811

Beeler, S., Tran, H. T., & Dietz, N. (1999). Representation of GaP formation by a reduced order surface kinetics model using p-polarized reflectance measurements. JOURNAL OF APPLIED PHYSICS, 86(1), 674–682. https://doi.org/10.1063/1.370783

Narayanan, V., Sukidi, N., Hu, C. M., Dietz, N., Bachmann, K. J., Mahajan, S., & Shingubara, S. (1998, June 26). Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates. https://doi.org/10.1016/s0921-5107(98)00169-x

Aspnes, D. E., & Dietz, N. (1998, June). Optical approaches for controlling epitaxial growth. APPLIED SURFACE SCIENCE, Vol. 130, pp. 367–376. https://doi.org/10.1016/s0169-4332(98)00085-3

Bachmann, K. J., Sukidi, N., Hopfner, C., Harris, C., Dietz, N., Tran, H. T., … Banks, H. T. (1998). Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance. JOURNAL OF CRYSTAL GROWTH, 183(3), 323–337. https://doi.org/10.1016/s0022-0248(97)00410-7

Dietz, N., & Ito, K. (1998, February). Real-time optical characterization of GaP heterostructures by p-polarized reflectance. THIN SOLID FILMS, Vol. 313, pp. 614–619. https://doi.org/10.1016/S0040-6090(97)00896-1

Bachmann, K. J., Hopfner, C., Sukidi, N., Miller, A. E., Harris, C. J., Aspnes, D. E., … Banks, H. T. (1997). Molecular layer epitaxy by real-time optical process monitoring. Applied Surface Science, 112(1997 Mar.), 38–47. https://doi.org/10.1016/S0169-4332(96)00975-0

Aspnes, D. E., Dietz, N., Rossow, U., & Bachmann, K. J. (1997). Multilevel approaches toward monitoring and control of semiconductor epitaxy. Control of semiconductor surfaces and interfaces: Symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium proceedings, no. 448), 451–462. https://doi.org/10.1557/proc-448-451

Dietz, N., Sukidi, N., Harris, C., & Bachmann, K. J. (1997). Real-time monitoring of surface processes by p-polarized reflectance. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 15, pp. 807–815. https://doi.org/10.1116/1.580712

Bachmann, K. J., Dietz, N., & Miller, A. E. (1996). Methods for monitoring and controlling deposition and etching using p-polarized reflectance spectroscopy. Washington, DC: U.S. Patent and Trademark Office.