Works (22)

2003 patent

Gallium nitride semiconductor structure including laterally offset patterned layers

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis & O. Nam

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Gallium nitride semiconductor structures including lateral gallium nitride layers

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis, O. Nam, T. Zheleva & M. Bremser

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis, O. Nam, T. Zheleva & M. Bremser

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions

Solid-State Electronics, 46(6), 827–835.

By: E. Danielsson, C. Zetterling, M. Ostling, K. Linthicum, D. Thomson, O. Nam, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Lateral epitaxy and dislocation density reduction in selectively grown GaN structures

Journal of Crystal Growth, 222(4), 706–718.

By: T. Zheleva, O. Nam, W. Ashmawi, J. Griffin & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Dry etching and metallization schemes in a GaN/SiC heterojunction device process

Materials Science Forum, 338(3), 1049–1052.

By: E. Danielsson, C. Zetterling, M. Ostling, S. Lee, K. Linthicum, D. Thomson, O. Nam, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 patent

Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis, O. Nam, T. Zheleva & M. Bremser

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films

Materials Science Forum, 338(3), 1471–1476.

By: R. Davis, O. Nam, T. Zheleva, T. Gehrke, K. Linthicum & P. Rajagopal

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN

Diamond and Related Materials, 8(2-5), 288–294.

By: A. Hanser, O. Nam, M. Bremser, D. Thomson, T. Gehrke, T. Zheleva, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 61-2(1999 July 30), 320–324.

By: E. Danielsson, C. Zetterling, M. Ostling, B. Breitholtz, K. Linthicum, D. Thomson, O. Nam, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures

Applied Physics Letters, 74(17), 2492–2494.

By: T. Zheleva, W. Ashmawi, O. Nam & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Acceptor and donor doping of AlxGa1 xN thin film alloys grown on 6H SiC(0001) substrates via metalorganic vapor phase epitaxy

Journal of Electronic Materials, 27(4), 229–232.

By: M. Bremser, W. Perry, O. Nam, D. Griffis, R. Loesing, D. Ricks, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy

Journal of Applied Physics, 84(9), 5238–5242.

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Electron emission properties of crystalline diamond and III-nitride surfaces

Applied Surface Science, 132(1998 June), 694–703.

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy

Journal of Electronic Materials, 27(4), 233–237.

By: O. Nam, T. Zheleva, M. Bremser & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Optical and structural properties of lateral epitaxial overgrown GaN layers

Journal of Crystal Growth, 190(1998 June), 92–96.

By: J. Freitas, O. Nam, T. Zheleva & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Optical characterization of lateral epitaxial overgrown GaN layers

Applied Physics Letters, 72(23), 2990–2992.

By: J. Freitas, O. Nam, R. Davis, G. Saparin & S. Obyden

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Photoelectrochemical capacitance-voltage measurements in GaN

Journal of Electronic Materials, 27(5), L26–28.

By: C. Stutz, M. Mack, M. Bremser, O. Nam, R. Davis & D. Look

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Growth of gan and a1(0.2)ga(0.8)n on patterned substrates via organometallic vapor phase epitaxy

Japanese Journal of Applied Physics. Part 2, Letters, 36(5a), L532–535.

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Growth, doping and characterization of Al(x)Ga(1-x)N thin film alloys on 6H-SiC(0001) substrates

Diamond and Related Materials, 6(2-4), 196–201.

By: M. Bremser, W. Perry, T. Zheleva, N. Edwards, O. Nam, N. Parikh, D. Aspnes, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

Applied Physics Letters, 71(18), 2698–2640.

By: O. Nam, M. Bremser, T. Zheleva & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Variation of GaN valence bands with biaxial stress and quantification of residual stress

Applied Physics Letters, 70(1997), 2001.

By: N. Edwards, M. Bremser, T. Weeks, O. Nam, R. Davis, H. Liu, R. Stall, M. Horton ...

Source: NC State University Libraries
Added: August 6, 2018