Ok-Hyun Nam

Davis, R. F., & Nam, O.-H. (2003). Gallium nitride semiconductor structure including laterally offset patterned layers. Washington, DC: U.S. Patent and Trademark Office.

Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2003). Gallium nitride semiconductor structures including lateral gallium nitride layers. Washington, DC: U.S. Patent and Trademark Office.

Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2003). Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth. Washington, DC: U.S. Patent and Trademark Office.

Danielsson, E., Zetterling, C. M., Ostling, M., Linthicum, K., Thomson, D. B., Nam, O. H., & Davis, R. F. (2002). The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions. SOLID-STATE ELECTRONICS, 46(6), 827–835. https://doi.org/10.1016/S0038-1101(01)00346-X

Zheleva, T. S., Nam, O. H., Ashmawi, W. M., Griffin, J. D., & Davis, R. F. (2001). Lateral epitaxy and dislocation density reduction in selectively grown GaN structures. JOURNAL OF CRYSTAL GROWTH, 222(4), 706–718. https://doi.org/10.1016/S0022-0248(00)00832-0

Danielsson, E., Zetterling, C. M., Ostling, M., Lee, S. K., Linthicum, K. J., Thomson, D. B., … Davis, R. F. (2000). Dry etching and metallization schemes in a GaN/SiC heterojunction device process. Materials Science Forum, 338(3), 1049–1052.

Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2000). Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer. Washington, DC: U.S. Patent and Trademark Office.

Davis, R. F., Nam, O. H., Zheleva, T. S., Gehrke, T., Linthicum, K. J., & Rajagopal, P. (2000). Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films. Materials Science Forum, 338(3), 1471–1476.

Hanser, A. D., Nam, O. H., Bremser, M. D., Thomson, D. B., Gehrke, T., Zheleva, T. S., & Davis, R. F. (1999, March). Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN. DIAMOND AND RELATED MATERIALS, Vol. 8, pp. 288–294. https://doi.org/10.1016/S0925-9635(98)00341-0

Danielsson, E., Zetterling, C. M., Ostling, M., Breitholtz, B., Linthicum, K., Thomson, D. B., … Davis, R. F. (1999). Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes. Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 61-2(1999 July 30), 320–324.

Zheleva, T. S., Ashmawi, W. M., Nam, O. H., & Davis, R. F. (1999). Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures. APPLIED PHYSICS LETTERS, 74(17), 2492–2494. https://doi.org/10.1063/1.123017

Bremser, M. D., Perry, W. G., Nam, O. H., Griffis, D. P., Loesing, R., Ricks, D. A., & Davis, R. F. (1998, April). Acceptor and donor doping of AlxGa1-xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy. JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 229–232. https://doi.org/10.1007/s11664-998-0392-9

Ward, B. L., Nam, O. H., Hartman, J. D., English, S. L., McCarson, B. L., Schlesser, R., … Nemanich, R. J. (1998). Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy. JOURNAL OF APPLIED PHYSICS, 84(9), 5238–5242. https://doi.org/10.1063/1.368775

Nemanich, R. J., Baumann, P. K., Benjamin, M. C., Nam, O. H., Sowers, A. T., Ward, B. L., … Davis, R. F. (1998, June). Electron emission properties of crystalline diamond and III-nitride surfaces. APPLIED SURFACE SCIENCE, Vol. 130, pp. 694–703. https://doi.org/10.1016/s0169-4332(98)00140-8

Nam, O. H., Zheleva, T. S., Bremser, M. D., & Davis, R. F. (1998, April). Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy. JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 233–237. https://doi.org/10.1007/s11664-998-0393-8

Freitas, J. A., Nam, O. H., Zheleva, T. S., & Davis, R. F. (1998). Optical and structural properties of lateral epitaxial overgrown GaN layers. Journal of Crystal Growth, 190(1998 June), 92–96.

Freitas, J. A., Nam, O. H., Davis, R. F., Saparin, G. V., & Obyden, S. K. (1998). Optical characterization of lateral epitaxial overgrown GaN layers. APPLIED PHYSICS LETTERS, 72(23), 2990–2992. https://doi.org/10.1063/1.121517

Stutz, C. E., Mack, M., Bremser, M. D., Nam, O. H., Davis, R. F., & Look, D. C. (1998, May). Photoelectrochemical capacitance-voltage measurements in GaN. https://doi.org/10.1007/s11664-998-0182-4

Nam, O. H., Bremser, M. D., Ward, B. L., Nemanich, R. J., & Davis, R. F. (1997). Growth of GaN and Al0.2Ga0.8N on patterened substrates via organometallic vapor phase epitaxy. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 36(5A), L532–L535. https://doi.org/10.1143/JJAP.36.L532

Bremser, M. D., Perry, W. G., Zheleva, T., Edwards, N. V., Nam, O. H., Parikh, N., … Davis, R. F. (1997, March). Growth, doping and characterization of AlxGa1-xN thin film alloys on 6H-SiC(0001) substrates. DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 196–201. https://doi.org/10.1016/S0925-9635(96)00626-7

Nam, O.-H., Bremser, M. D., Zheleva, T. S., & Davis, R. F. (1997). Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy. Applied Physics Letters, 71(18), 2698–2640.

Edwards, N. V., Yoo, S. D., Bremser, M. D., Weeks, T. W., Nam, O. H., Davis, R. F., … Aspnes, D. E. (1997). Variation of GaN valence bands with biaxial stress and quantification of residual stress. APPLIED PHYSICS LETTERS, 70(15), 2001–2003. https://doi.org/10.1063/1.119089