Works (10)
1999 article
Stimulated emission in GaN thin films in the temperature range of 300–700 K
Bidnyk, S., Little, B. D., Schmidt, T. J., Cho, Y. H., Krasinski, J., Song, J. J., … Davis, R. F. (1999, February 1). Journal of Applied Physics.
1998 article
Acceptor and donor doping of AlxGa1−xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy
Bremser, M. D., Perry, W. G., Nam, O. H., Griffis, D. P., Loesing, R., Ricks, D. A., & Davis, R. F. (1998, April 1). Journal of Electronic Materials.
1998 article
Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AIN and GaN thin films on α(6H)-SiC substrates
Hanser, A. D., Wolden, C. A., Perry, W. G., Zheleva, T., Carlson, E. P., Banks, A. D., … Davis, R. F. (1998, April 1). Journal of Electronic Materials.
1998 article
Biaxial strain in AlxGa1−xN/GaN layers deposited on 6H-SiC
Perry, W. G., Bremser, M. B., Zheleva, T., Linthicum, K. J., & Davis, R. F. (1998, July 1). Thin Solid Films.
1998 article
Cathodoluminescence studies of the deep level emission bands of AlxGa1−xN films deposited on 6H–SiC(0001)
Perry, W. G., Bremser, M. B., & Davis, R. F. (1998, January 1). Journal of Applied Physics.
1998 article
Intrinsic exciton transitions in GaN
Shan, W., Fischer, A. J., Hwang, S. J., Little, B. D., Hauenstein, R. J., Xie, X. C., … Davis, R. F. (1998, January 1). Journal of Applied Physics.
1997 article
Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization
Davis, R. F., Weeks, T. W., Bremser, M. D., Tanaka, S., Kern, R. S., Sitar, Z., … Wang, C. (1997, February 1). Solid-State Electronics.
1997 article
Growth of AlN, GaN and AlxGa1 − xN thin films on vicinal and on-axis 6HSiC(0001) substrates
Davis, R. F., Bremser, M. D., Perry, W. G., & Ailey, K. S. (1997, January 1). Journal of the European Ceramic Society.
1997 article
Growth, doping and characterization of AlxGa1 − xN thin film alloys on 6H-SiC(0001) substrates
Bremser, M. D., Perry, W. G., Zheleva, T., Edwards, N. V., Nam, O. H., Parikh, N., … Davis, R. F. (1997, March 1). Diamond and Related Materials, Vol. 6, pp. 196–201.
1997 article
Raman analysis of the configurational disorder in AlxGa1−xN films
Bergman, L., Bremser, M. D., Perry, W. G., Davis, R. F., Dutta, M., & Nemanich, R. J. (1997, October 13). Applied Physics Letters.