1999 journal article
Stimulated emission in GaN thin films in the temperature range of 300-700 K
Journal of Applied Physics, 85(3), 1792–1795.
By: S. Bidnyk, B. Little, T. Schmidt, Y. Cho, J. Krasinski, J. Song, B. Goldenberg, W. Yang ...and 3 other NC State authors, W. Perry, M. Bremser & R. Davis
1998 journal article
Acceptor and donor doping of AlxGa1 xN thin film alloys grown on 6H SiC(0001) substrates via metalorganic vapor phase epitaxy
Journal of Electronic Materials, 27(4), 229–232.
By: M. Bremser, W. Perry, O. Nam, D. Griffis, R. Loesing, D. Ricks, R. Davis
Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AlN and GaN thin films on alpha(6H) SiC substrates
Journal of Electronic Materials, 27(4), 238–245.
By: A. Hanser, C. Wolden, W. Perry, T. Zheleva, E. Carlson, A. Banks, R. Therrien, R. Davis
Biaxial strain in AlxGa1-xN/GaN layers deposited on 6H-SiC
Thin Solid Films, 324(1-2), 107–114.
By: W. Perry, M. Bremser, T. Zheleva, K. Linthicum & R. Davis
Cathodoluminescence studies of the deep level emission bands of AlxGa1 xN films deposited on 6H SiC(0001)
Journal of Applied Physics, 83(1), 469–475.
By: W. Perry, M. Bremser & R. Davis
Intrinsic exciton transitions in GaN
Journal of Applied Physics, 83(1), 455–461.
By: W. Shan, A. Fischer, S. Hwang, B. Little, R. Hauenstein, X. Xie, J. Song, S. Kim ...and 6 other authors, including 3 NC State authors, B. Goldenberg, R. Horning, S. Krishnankutty, W. Perry, M. Bremser & R. Davis
1997 journal article
Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization
Solid-State Electronics, 41(2), 129–134.
By: R. Davis
Growth of AlN, GaN and AlxGa1-xN thin films on vicinal and on-axis 6H-SiC(0001) substrates
Journal of the European Ceramic Society, 17(15-16), 1775–1779.
By: R. Davis, M. Bremser, W. Perry & K. Ailey
Growth, doping and characterization of Al(x)Ga(1-x)N thin film alloys on 6H-SiC(0001) substrates
Diamond and Related Materials, 6(2-4), 196–201.
By: M. Bremser, W. Perry, T. Zheleva, N. Edwards, O. Nam, N. Parikh, D. Aspnes, R. Davis
Raman analysis of the configurational disorder in AlxGa1-xN films
Applied Physics Letters, 71(15), 2157–2159.
By: L. Bergman, M. Bremser, W. Perry, R. Davis, M. Dutta & R. Nemanich
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