Works (10)
Updated: July 5th, 2023 16:04
1999 journal article
Stimulated emission in GaN thin films in the temperature range of 300-700 K
JOURNAL OF APPLIED PHYSICS, 85(3), 1792–1795.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
1998 article
Acceptor and donor doping of AlxGa1-xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy
Bremser, M. D., Perry, W. G., Nam, O. H., Griffis, D. P., Loesing, R., Ricks, D. A., & Davis, R. F. (1998, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 229–232.
author keywords: 6H-SiC(0001); acceptor doping; AlxGa1-xN; GaN; charge scattering; donor doping; electron mobility
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
1998 article
Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AlN and GaN thin films on alpha(6H)-SiC substrates
Hanser, A. D., Wolden, C. A., Perry, W. G., Zheleva, T., Carlson, E. P., Banks, A. D., … Davis, R. F. (1998, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 238–245.
author keywords: AlN; diluent; doping; GaN; metalorganic vapor phase epitaxy (MOVPE); photoluminescence (PL); reactor modeling
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
1998 journal article
Biaxial strain in AlxGa1-xN/GaN layers deposited on 6H-SiC
THIN SOLID FILMS, 324(1-2), 107–114.
author keywords: high resolution X-ray diffraction; in-plane components; reciprocal lattice vector
Source: Web Of Science
Added: August 6, 2018
1998 journal article
Cathodoluminescence studies of the deep level emission bands of AlxGa1-xN films deposited on 6H-SiC(0001)
JOURNAL OF APPLIED PHYSICS, 83(1), 469–475.
Source: Web Of Science
Added: August 6, 2018
1998 journal article
Intrinsic exciton transitions in GaN
JOURNAL OF APPLIED PHYSICS, 83(1), 455–461.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
1997 article
Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization
Davis, R. F., Weeks, T. W., Bremser, M. D., Tanaka, S., Kern, R. S., Sitar, Z., … Wang, C. (1997, February). SOLID-STATE ELECTRONICS, Vol. 41, pp. 129–134.
UN Sustainable Development Goal Categories
14. Life Below Water
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
1997 article
Growth of AlN, GaN and AlxGa1-xN thin films on vicinal and on-axis 6H-SiC(0001) substrates
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, Vol. 17, pp. 1775–1779.
Source: Web Of Science
Added: August 6, 2018
1997 article
Growth, doping and characterization of AlxGa1-xN thin film alloys on 6H-SiC(0001) substrates
Bremser, M. D., Perry, W. G., Zheleva, T., Edwards, N. V., Nam, O. H., Parikh, N., … Davis, R. F. (1997, March). DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 196–201.
author keywords: GaN; alloy; AlGaN epitaxy; SiC substrates
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
1997 journal article
Raman analysis of the configurational disorder in AlxGa1-xN films
APPLIED PHYSICS LETTERS, 71(15), 2157–2159.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
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