Works (10)

Updated: July 5th, 2023 16:04

1999 journal article

Stimulated emission in GaN thin films in the temperature range of 300-700 K

JOURNAL OF APPLIED PHYSICS, 85(3), 1792–1795.

By: S. Bidnyk*, B. Little*, T. Schmidt*, Y. Cho*, J. Krasinski*, J. Song*, B. Goldenberg*, W. Yang* ...

Source: Web Of Science
Added: August 6, 2018

1998 article

Acceptor and donor doping of AlxGa1-xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy

Bremser, M. D., Perry, W. G., Nam, O. H., Griffis, D. P., Loesing, R., Ricks, D. A., & Davis, R. F. (1998, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 229–232.

By: M. Bremser n, W. Perry n, O. Nam n, D. Griffis n, R. Loesing n, D. Ricks n, R. Davis*

author keywords: 6H-SiC(0001); acceptor doping; AlxGa1-xN; GaN; charge scattering; donor doping; electron mobility
Source: Web Of Science
Added: August 6, 2018

1998 article

Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AlN and GaN thin films on alpha(6H)-SiC substrates

Hanser, A. D., Wolden, C. A., Perry, W. G., Zheleva, T., Carlson, E. P., Banks, A. D., … Davis, R. F. (1998, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 238–245.

By: A. Hanser n, C. Wolden*, W. Perry n, T. Zheleva n, E. Carlson n, A. Banks n, R. Therrien n, R. Davis n

author keywords: AlN; diluent; doping; GaN; metalorganic vapor phase epitaxy (MOVPE); photoluminescence (PL); reactor modeling
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Biaxial strain in AlxGa1-xN/GaN layers deposited on 6H-SiC

THIN SOLID FILMS, 324(1-2), 107–114.

By: W. Perry n, M. Bremser n, T. Zheleva n, K. Linthicum n & R. Davis n

author keywords: high resolution X-ray diffraction; in-plane components; reciprocal lattice vector
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Cathodoluminescence studies of the deep level emission bands of AlxGa1-xN films deposited on 6H-SiC(0001)

JOURNAL OF APPLIED PHYSICS, 83(1), 469–475.

By: W. Perry n, M. Bremser n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Intrinsic exciton transitions in GaN

JOURNAL OF APPLIED PHYSICS, 83(1), 455–461.

By: W. Shan*, A. Fischer*, S. Hwang*, B. Little*, R. Hauenstein*, X. Xie*, J. Song*, S. Kim* ...

co-author countries: Korea (Republic of) 🇰🇷
Source: Web Of Science
Added: August 6, 2018

1997 article

Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization

Davis, R. F., Weeks, T. W., Bremser, M. D., Tanaka, S., Kern, R. S., Sitar, Z., … Wang, C. (1997, February). SOLID-STATE ELECTRONICS, Vol. 41, pp. 129–134.

By: R. Davis n, T. Weeks n, M. Bremser n, S. Tanaka n, R. Kern n, Z. Sitar n, K. Ailey n, W. Perry n, C. Wang n

Source: Web Of Science
Added: August 6, 2018

1997 article

Growth of AlN, GaN and AlxGa1-xN thin films on vicinal and on-axis 6H-SiC(0001) substrates

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, Vol. 17, pp. 1775–1779.

By: R. Davis n, M. Bremser n, W. Perry n & K. Ailey n

Source: Web Of Science
Added: August 6, 2018

1997 article

Growth, doping and characterization of AlxGa1-xN thin film alloys on 6H-SiC(0001) substrates

Bremser, M. D., Perry, W. G., Zheleva, T., Edwards, N. V., Nam, O. H., Parikh, N., … Davis, R. F. (1997, March). DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 196–201.

By: M. Bremser n, W. Perry n, T. Zheleva n, N. Edwards n, O. Nam n, N. Parikh*, D. Aspnes n, R. Davis n

author keywords: GaN; alloy; AlGaN epitaxy; SiC substrates
Sources: Web Of Science, ORCID
Added: August 6, 2018

1997 journal article

Raman analysis of the configurational disorder in AlxGa1-xN films

APPLIED PHYSICS LETTERS, 71(15), 2157–2159.

By: L. Bergman n, M. Bremser n, W. Perry n, R. Davis n, M. Dutta n & R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

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