Edwin L. Piner

Piner, E. L., Rajagopal, P., Roberts, J. C., & Linthicum, K. J. (2008). Gallium nitride material structures including substrates and methods associated with the same. Washington, DC: U.S. Patent and Trademark Office.

Nagy, W. H., Borges, R. M., Brown, J. D., Chaudhari, A. D., Cook, J. W., Hanson, A. W., … Vescan, A. (2008). Gallium nitride material transistors and methods associated with the same. Washington, DC: U.S. Patent and Trademark Office.

Johnson, J. W., Piner, E. L., & Linthicum, K. J. (2008). Semiconductor device-based sensors. Washington, DC: U.S. Patent and Trademark Office.

Al-Ajmi, F. S., Kolbas, R. M., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., & Linthicum, K. J. (2008). Stimulated emission and lasing from an Al0.13Ga0.87N/GaN double heterostructure grown on a silicon substrate. Applied Physics Letters, 92(2).

Al-Ajmi, F. S., Kolbas, R. M., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., & Linthicum, K. J. (2007). Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate. Applied Physics Letters, 90(15).

Weeks, T. W., Piner, E. L., Borges, R. M., & Linthicum, K. J. (2003). Gallium nitride material devices and methods including backside vias. Washington, DC: U.S. Patent and Trademark Office.

Weeks, T. W., Piner, E. L., Gehrke, T., & Linthicum, K. J. (2003). Gallium nitride materials and methods. Washington, DC: U.S. Patent and Trademark Office.

Liliental-Weber, Z., Benamara, M., Washburn, J., Domagala, J. Z., Bak-Misiuk, J., Piner, E. L., … Bedair, S. M. (2001, April). Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies. JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 439–444. https://doi.org/10.1007/s11664-001-0056-5

Joshkin, V. A., Parker, C. A., Bedair, S. M., Muth, J. F., Shmagin, I. K., Kolbas, R. M., … Molnar, R. J. (1999). Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy. JOURNAL OF APPLIED PHYSICS, 86(1), 281–288. https://doi.org/10.1063/1.370727

Robins, L. H., Paul, A. J., Parker, C. A., Roberts, J. C., Bedair, S. M., Piner, E. L., & El-Masry, N. A. (1999). Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.22). https://doi.org/10.1557/s1092578300002490

Behbehani, M. K., Piner, E. L., Liu, S. X., El-Masry, N. A., & Bedair, S. M. (1999). Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition. APPLIED PHYSICS LETTERS, 75(15), 2202–2204. https://doi.org/10.1063/1.124964

El-Masry, N. A., Piner, E. L., Liu, S. X., & Bedair, S. M. (1998). Phase separation in InGaN grown by metalorganic chemical vapor deposition. APPLIED PHYSICS LETTERS, 72(1), 40–42. https://doi.org/10.1063/1.120639

Piner, E. L., Behbehani, M. K., ElMasry, N. A., McIntosh, F. G., Roberts, J. C., Boutros, K. S., & Bedair, S. M. (1997). Effect of hydrogen on the indium incorporation in InGaN epitaxial films. APPLIED PHYSICS LETTERS, 70(4), 461–463. https://doi.org/10.1063/1.118181

Bedair, S. M., McIntosh, F. G., Roberts, J. C., Piner, E. L., Boutros, K. S., & ElMasry, N. A. (1997). Growth and characterization of In-based nitride compounds. JOURNAL OF CRYSTAL GROWTH, 178(1-2), 32–44. https://doi.org/10.1016/S0022-0248(97)00069-9

Piner, E. L., Behbehani, M. K., ElMasry, N. A., Roberts, J. C., McIntosh, F. G., & Bedair, S. M. (1997). Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films. APPLIED PHYSICS LETTERS, 71(14), 2023–2025. https://doi.org/10.1063/1.119775

Joshkin, V. A., Roberts, J. C., McIntosh, F. G., Bedair, S. M., Piner, E. L., & Behbehani, M. K. (1997). Optical memory effect in GaN epitaxial films. APPLIED PHYSICS LETTERS, 71(2), 234–236. https://doi.org/10.1063/1.120414

Zeng, K. C., Smith, M., Lin, J. Y., Jiang, H. X., Roberts, J. C., Piner, E. L., & McIntosh, F. G. (1997). Optical transitions in InGaN/AlGaN single quantum wells. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1139–1143.