Zbigniew J. Radzimski

Works (5)

Updated: August 16th, 2024 13:38

1999 journal article

Bias dependent contrast mechanisms in EBIC images of MOS capacitors

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(4), 1529–1535.

By: H. Kirk n, Z. Radzimski*, A. Romanowski n & G. Rozgonyi n

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Source: Web Of Science
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1998 journal article

Directional copper deposition using dc magnetron self-sputtering

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(3), 1102–1106.

By: Z. Radzimski, W. Posadowski, S. Rossnagel & S. Shingubara

Source: NC State University Libraries
Added: August 6, 2018

1998 article

Medium field breakdown origin on metal oxide semiconductor capacitor containing grown-in Czochralski silicon crystal defects

Tamatsuka, M., Radzimski, Z., Rozgonyi, G. A., Oka, S., Kato, M., & Kitagawara, Y. (1998, March). JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Vol. 37, pp. 1236–1239.

By: M. Tamatsuka n, Z. Radzimski n, G. Rozgonyi n, S. Oka*, M. Kato * & Y. Kitagawara*

author keywords: grown-in defect; oxide breakdown; electron beam induced current; vacancy cluster; focused ion beam; local tunneling current; Fowler-Nordheim tunneling current
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1997 journal article

Metallic impurity gettering and secondary defect formation in megaelectron volt self-implanted Czochralski and float-zone silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(8), 2872–2881.

By: R. Brown n, O. Kononchuk n, I. Bondarenko n, A. Romanowski n, Z. Radzimski n, G. Rozgonyi n, F. Gonzalez  n

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Source: Web Of Science
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1997 article

The effect of oxygen on secondary defect formation in MeV self-implanted silicon

Brown, R. A., Kononchuk, O., Radzimski, Z., Rozgonyi, G. A., & Gonzalez, F. (1997, May). NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 127, pp. 55–58.

By: R. Brown  n, O. Kononchuk  n, Z. Radzimski n, G. Rozgonyi n & F. Gonzalez *

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Source: Web Of Science
Added: August 6, 2018

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