@article{kirk_radzimski_romanowski_rozgonyi_1999, title={Bias dependent contrast mechanisms in EBIC images of MOS capacitors}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1391799}, abstractNote={Defects and inhomogeneities in the electrical properties of metal oxide silicon capacitors are analyzed by scanning electron microscopy, using the electron beam induced current technique (MOS/EBIC). All capacitors were analyzed in their as-fabricated or prebreakdown condition. The collected signals and image contrast are found to be highly dependent on the gate-to-substrate bias applied during MOS/EBIC examination, and this bias-dependence is shown to be correlated with the nature and physical location of the defect. Specific MOS defects were selected for this study according to their position in the substrate, in the oxide, or at the Si/SiO 2 interface. Substrate defects examined were misfit dislocations in epitaxial Si(Ge) on Si. Interfacial inhomogeneities included thermally oxidized, reactive ion etched (RIE) Si surfaces, and SiO 2 precipitates or D-defects which extend to meet the Si surface. Oxide layer inhomogeneities were also detectable which exhibited a strong contrast dependence on the oxide electric field strength.}, number={4}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Kirk, HR and Radzimski, Z and Romanowski, A and Rozgonyi, GA}, year={1999}, month={Apr}, pages={1529–1535} }
 @article{radzimski_posadowski_rossnagel_shingubara_1998, title={Directional copper deposition using dc magnetron self-sputtering}, volume={16}, number={3}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Radzimski, Z. J. and Posadowski, W. M. and Rossnagel, S. M. and Shingubara, S.}, year={1998}, pages={1102–1106} }
 @article{tamatsuka_radzimski_rozgonyi_oka_kato_kitagawara_1998, title={Medium field breakdown origin on metal oxide semiconductor capacitor containing grown-in Czochralski silicon crystal defects}, volume={37}, ISSN={["0021-4922"]}, DOI={10.1143/JJAP.37.1236}, abstractNote={The medium field breakdown of metal oxide semiconductor capacitor due to the Czochralski silicon crystal originated defect was studied in view of both electrical and structural analyses. By analyzing the local tunneling current which initiates the medium field breakdown, phenomenological defect sizes were calculated from the local tunneling current by assuming the local oxide thinning model. They were the defect diameter as 5 to 50 nm and the local oxide thinning as ∼25 nm. These data were confirmed by direct defect observation using high precision defect isolation procedure followed by transmission electron microscopy. Direct observation revealed that the real defect size was ∼200 nm which correlated well with other recently reported works. The real local oxide thinning,however,was not as large as phenomenological calculation. To explain the differences between phenomenological and real local oxide thinning, the poly-Si grain protrusion induced stress model was proposed.}, number={3B}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS}, author={Tamatsuka, M and Radzimski, Z and Rozgonyi, GA and Oka, S and Kato, M and Kitagawara, Y}, year={1998}, month={Mar}, pages={1236–1239} }
 @article{brown_kononchuk_bondarenko_romanowski_radzimski_rozgonyi_gonzalez_1997, title={Metallic impurity gettering and secondary defect formation in megaelectron volt self-implanted Czochralski and float-zone silicon}, volume={144}, ISSN={["0013-4651"]}, DOI={10.1149/1.1837910}, abstractNote={Megaelectron volt (MeV) self-implantation has been investigated as a means of producing buried defect layers for gettering metallic impurities in Czochralski (CZ) and float-zone (FZ) silicon. The properties of implanted and annealed wafers were studied by generation lifetime (Zerbst) analysis of transient capacitance data, capacitance-voltage measurements, deep-level transient spectroscopy, scanning electron-beam-induced current microscopy, transmission electron microscopy, optical microscopy with preferential chemical etching, and secondary ion mass spectroscopy. We found that metallic contaminants such as Fe and Cu were effectively gettered to buried extended defect layers formed by implantation of ion fluences ≤1 x 10 15 Si cm -2 . For example, the concentration of iron in regions near the buried defects can be reduced to below 10 10 cm -3 in samples annealed at 900°C. The region above the damage layer appears to be free of electrically active defects, having very high generation lifetime values, and is therefore suitable for device processing. However, the structure and width of the buried defect band is sensitive to the implanted ion fluence and the oxygen content of the wafers. For example, the defect layers formed by high ion fluences (∼10 15 cm -2 ) are wider in FZ wafers than in CZ wafers. For fluences 1 x 10 14 cm 2 , dislocations extend from the buried damage band in both directions during annealing and are observed at depths up to 10 μm. These dislocations intersect the wafer surface in both CZ and FZ wafers, making fluences lower than ≃ 5 x 10 14 cm -2 unsuitable for device fabrication.}, number={8}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Brown, RA and Kononchuk, O and Bondarenko, I and Romanowski, A and Radzimski, Z and Rozgonyi, GA and Gonzalez, F}, year={1997}, month={Aug}, pages={2872–2881} }
 @article{brown_kononchuk_radzimski_rozgonyi_gonzalez_1997, title={The effect of oxygen on secondary defect formation in MeV self-implanted silicon}, volume={127}, ISSN={["0168-583X"]}, DOI={10.1016/S0168-583X(96)00848-8}, abstractNote={The effects of ion fluence and oxygen concentration on secondary defect formation in MeV self-implanted silicon has been studied for Czochralski (Cz) and float zone (FZ) wafers by means of transmission electron microscopy (TEM) and optical microscopy with bevel polishing/chemical etching. We found that the density, distribution and number of extended defects is strongly dependent upon the oxygen concentration. The dislocation density was found to be up to one order of magnitude lower in FZ wafers. At high ion fluences (∼ 1015 cm−2), secondary defects form in a well-defined band near the ion projected range, Rp. At lower ion fluences, dislocations extend from the defect band to increasingly large depths. For ion fluences approaching the threshold for secondary defect formation (∼ 1014 cm−2), defects are observed from the surface to depths of ⋍ 10 μm, i.e., five times Rp.}, journal={NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS}, author={Brown, RA and Kononchuk, O and Radzimski, Z and Rozgonyi, GA and Gonzalez, F}, year={1997}, month={May}, pages={55–58} }