Arnold Reisman

Methods of raising reflow temperature of glass alloys by thermal treatment in steam, and microelectronic structures formed thereby

Washington, DC: U.S. Patent and Trademark Office.

Deposition and characterization of undoped and boron and phosphorus doped (SixGe1-xO2) glass films

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(4), 1560–1567.

Planarization processes and applications III. As-deposited and annealed film properties

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(4), 1513–1524.

Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: A thermodynamic analysis I. The system Si-Ge-Cl-H

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(11), 4333–4341.

Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: A thermodynamic analysis II. The system Si-Ge-Cl-H-Ar

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(11), 4342–4344.

Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data I. Deposition parameters

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(5), 1847–1853.

Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data II. Morphology and composition as a function of deposition parameters

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(5), 1854–1858.

An alternative derivation for the equilibrium constant of binary solid solution-vapor systems

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(10), 3817–3818.

Differential thermal analysis of glass mixtures containing SiO2, GeO2, B2O3, and P2O5

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(12), 4569–4579.

Planarization processes and applications - I. Undoped GeO2-SiO2 glasses

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(10), 3860–3871.

Planarization processes and applications - II. B2O3/P2O5 doped GeO2-SiO2 classes

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(10), 3872–3885.

Low-field bulk defect generation during uniform carrier injection into the gate insulator of insulated gate field effect transistors at various temperatures

JOURNAL OF ELECTRONIC MATERIALS, 27(7), 908–914.

Charge centroid and origin of generated and intrinsic bulk defects at 293 and 100 K in insulated gate field effect transistors

JOURNAL OF APPLIED PHYSICS, 81(3), 1566–1574.

Low-field trap generation dependence on the injection current density in gate insulators - How valid are accelerated hot electron measurements?

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(7), 2517–2521.

High performance integrated circuit chip package

Washington, DC: U.S. Patent and Trademark Office.