Works (15)

Updated: July 5th, 2023 16:04

2001 patent

Methods of raising reflow temperature of glass alloys by thermal treatment in steam, and microelectronic structures formed thereby

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Deposition and characterization of undoped and boron and phosphorus doped (SixGe1-xO2) glass films

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(4), 1560โ€“1567.

By: D. Simpson n, R. Croswell n, A. Reisman n, C. Williams n & D. Temple n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Planarization processes and applications III. As-deposited and annealed film properties

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(4), 1513โ€“1524.

By: R. Croswell n, A. Reisman n, D. Simpson n, D. Temple* & C. Williams*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: A thermodynamic analysis I. The system Si-Ge-Cl-H

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(11), 4333โ€“4341.

By: R. Soman*, A. Reisman* & D. Temple*

Source: Web Of Science
Added: August 6, 2018

2000 journal article

Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: A thermodynamic analysis II. The system Si-Ge-Cl-H-Ar

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(11), 4342โ€“4344.

By: R. Soman n, A. Reisman n & D. Temple n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data I. Deposition parameters

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(5), 1847โ€“1853.

By: R. Soman n, A. Reisman n, D. Temple n & R. Alberti

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data II. Morphology and composition as a function of deposition parameters

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(5), 1854โ€“1858.

By: R. Soman n, A. Reisman n, D. Temple n, R. Alberti & C. Pace*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1999 journal article

An alternative derivation for the equilibrium constant of binary solid solution-vapor systems

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(10), 3817โ€“3818.

By: R. Soman n, A. Reisman n & D. Temple n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Differential thermal analysis of glass mixtures containing SiO2, GeO2, B2O3, and P2O5

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(12), 4569โ€“4579.

By: R. Croswell n, A. Reisman n, D. Simpson n, D. Temple* & C. Williams*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Planarization processes and applications - I. Undoped GeO2-SiO2 glasses

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(10), 3860โ€“3871.

By: D. Simpson n, R. Croswell n, A. Reisman n, D. Temple n & C. Williams n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Planarization processes and applications - II. B2O3/P2O5 doped GeO2-SiO2 classes

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(10), 3872โ€“3885.

By: D. Simpson n, R. Croswell n, A. Reisman n, D. Temple n & C. Williams n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Low-field bulk defect generation during uniform carrier injection into the gate insulator of insulated gate field effect transistors at various temperatures

JOURNAL OF ELECTRONIC MATERIALS, 27(7), 908โ€“914.

By: H. Kim n, C. Williams n & A. Reisman n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: electron trapping; oxide defects; trap generation
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Charge centroid and origin of generated and intrinsic bulk defects at 293 and 100 K in insulated gate field effect transistors

JOURNAL OF APPLIED PHYSICS, 81(3), 1566โ€“1574.

By: H. Kim n, C. Williams n & A. Reisman n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Low-field trap generation dependence on the injection current density in gate insulators - How valid are accelerated hot electron measurements?

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(7), 2517โ€“2521.

By: H. Kim n, A. Reisman n & C. Williams n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1994 patent

High performance integrated circuit chip package

Washington, DC: U.S. Patent and Trademark Office.

By: I. Turlik, A. Reisman, D. Nayak, L. Hwang, G. Dishon, S. Jacobs, R. Darveaux, . Poley, M. Neil

Source: NC State University Libraries
Added: August 6, 2018

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