Arnold Reisman

Methods of raising reflow temperature of glass alloys by thermal treatment in steam, and microelectronic structures formed thereby

Washington, DC: U.S. Patent and Trademark Office.

Deposition and Characterization of Undoped and Boron and Phosphorus Doped (Si[sub x]Ge[sub 1−x]O[sub 2]) Glass Films

Simpson, D. L., Croswell, R. T., Reisman, A., Williams, C. K., & Temple, D. (2000, January 1). Journal of The Electrochemical Society.

Planarization Processes and Applications III. As-Deposited and Annealed Film Properties

Croswell, R. T., Reisman, A., Simpson, D. L., Temple, D., & Williams, C. K. (2000, January 1). Journal of The Electrochemical Society.

Selective Area Chemical Vapor Deposition of Si[sub 1−x]Ge[sub x] Thin Film Alloys by the Alternating Cyclic Method: A Thermodynamic Analysis. I. The System Si-Ge-Cl-H

Soman, R., Reisman, A., & Temple, D. (2000, January 1). Journal of The Electrochemical Society.

Selective Area Chemical Vapor Deposition of Si[sub 1−x]Ge[sub x] Thin Film Alloys by the Alternating Cyclic Method: A Thermodynamic Analysis. II. The System Si-Ge-Cl-H-Ar

Soman, R., Reisman, A., & Temple, D. (2000, January 1). Journal of The Electrochemical Society.

Selective Area Chemical Vapor Deposition of Si[sub 1−x]Ge[sub x] Thin Film Alloys by the Alternating Cyclic Method: Experimental Data: I. Deposition Parameters

Soman, R., Reisman, A., Temple, D., & Alberti, R. (2000, January 1). Journal of The Electrochemical Society.

Selective Area Chemical Vapor Deposition of Si[sub 1−x]Ge[sub x] Thin Film Alloys by the Alternating Cyclic Method: Experimental Data: II. Morphology and Composition as a Function of Deposition Parameters

Soman, R., Reisman, A., Temple, D., Alberti, R., & Pace, C. (2000, January 1). Journal of The Electrochemical Society.

An Alternative Derivation for the Equilibrium Constant of Binary Solid Solution‐Vapor Systems

Soman, R., Reisman, A., & Temple, D. (1999, October 1). Journal of The Electrochemical Society.

Differential Thermal Analysis of Glass Mixtures Containing SiO2, GeO2,  B 2 O 3, and  P 2 O 5

Croswell, R. T., Reisman, A., Simpson, D. L., Temple, D., & Williams, C. K. (1999, December 1). Journal of The Electrochemical Society.

Planarization Processes and Applications: I. Undoped GeO2 ‐ SiO2 Glasses

Simpson, D. L., Croswell, R. T., Reisman, A., Temple, D., & Williams, C. K. (1999, October 1). Journal of The Electrochemical Society.

Planarization Processes and Applications: II.  B 2 O 3 /  P 2 O 5 Doped GeO2 ‐ SiO2 Glasses

Simpson, D. L., Croswell, R. T., Reisman, A., Temple, D., & Williams, C. K. (1999, October 1). Journal of The Electrochemical Society.

Low-field bulk defect generation during uniform carrier injection into the gate insulator of insulated gate field effect transistors at various temperatures

Kim, H. S., Williams, C. K., & Reisman, A. (1998, July 1). Journal of Electronic Materials.

Charge centroid and origin of generated and intrinsic bulk defects at 293 and 100 K in insulated gate field effect transistors

Kim, H. S., Williams, C. K., & Reisman, A. (1997, February 1). Journal of Applied Physics.

Low‐Field Trap Generation Dependence on the Injection Current Density in Gate Insulators: How Valid Are Accelerated Hot Electron Measurements?

Kim, H. S., Reisman, A., & Williams, C. K. (1997, July 1). Journal of The Electrochemical Society.

High performance integrated circuit chip package

Washington, DC: U.S. Patent and Trademark Office.