Arnold Reisman

Croswell, R. T., Reisman, A., Simpson, D. L., Temple, D., & Williams, C. K. (2001). Methods of raising reflow temperature of glass alloys by thermal treatment in steam, and microelectronic structures formed thereby. Washington, DC: U.S. Patent and Trademark Office.

Simpson, D. L., Croswell, R. T., Reisman, A., Williams, C. K., & Temple, D. (2000). Deposition and characterization of undoped and boron and phosphorus doped (SixGe1-xO2) glass films. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(4), 1560–1567. https://doi.org/10.1149/1.1393394

Croswell, R. T., Reisman, A., Simpson, D. L., Temple, D., & Williams, C. K. (2000). Planarization processes and applications III. As-deposited and annealed film properties. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(4), 1513–1524. https://doi.org/10.1149/1.1393387

Soman, R., Reisman, A., & Temple, D. (2000). Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: A thermodynamic analysis I. The system Si-Ge-Cl-H. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(11), 4333–4341. https://doi.org/10.1149/1.1394065

Soman, R., Reisman, A., & Temple, D. (2000). Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: A thermodynamic analysis II. The system Si-Ge-Cl-H-Ar. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(11), 4342–4344. https://doi.org/10.1149/1.1394066

Soman, R., Reisman, A., Temple, D., & Alberti, R. (2000). Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data I. Deposition parameters. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(5), 1847–1853. https://doi.org/10.1149/1.1393445

Soman, R., Reisman, A., Temple, D., Alberti, R., & Pace, C. (2000). Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data II. Morphology and composition as a function of deposition parameters. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(5), 1854–1858. https://doi.org/10.1149/1.1393446

Soman, R., Reisman, A., & Temple, D. (1999). An alternative derivation for the equilibrium constant of binary solid solution-vapor systems. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(10), 3817–3818. https://doi.org/10.1149/1.1392557

Croswell, R. T., Reisman, A., Simpson, D. L., Temple, D., & Williams, C. K. (1999). Differential thermal analysis of glass mixtures containing SiO2, GeO2, B2O3, and P2O5. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(12), 4569–4579. https://doi.org/10.1149/1.1392676

Simpson, D. L., Croswell, R. T., Reisman, A., Temple, D., & Williams, C. K. (1999). Planarization processes and applications - I. Undoped GeO2-SiO2 glasses. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(10), 3860–3871. https://doi.org/10.1149/1.1392565

Simpson, D. L., Croswell, R. T., Reisman, A., Temple, D., & Williams, C. K. (1999). Planarization processes and applications - II. B2O3/P2O5 doped GeO2-SiO2 classes. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(10), 3872–3885. https://doi.org/10.1149/1.1392566

Kim, H. S., Williams, C. K., & Reisman, A. (1998). Low-field bulk defect generation during uniform carrier injection into the gate insulator of insulated gate field effect transistors at various temperatures. JOURNAL OF ELECTRONIC MATERIALS, 27(7), 908–914. https://doi.org/10.1007/s11664-998-0117-0

Kim, H. S., Williams, C. K., & Reisman, A. (1997). Charge centroid and origin of generated and intrinsic bulk defects at 293 and 100 K in insulated gate field effect transistors. JOURNAL OF APPLIED PHYSICS, 81(3), 1566–1574. https://doi.org/10.1063/1.364087

Kim, H. S., Reisman, A., & Williams, C. K. (1997). Low-field trap generation dependence on the injection current density in gate insulators - How valid are accelerated hot electron measurements? JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(7), 2517–2521. https://doi.org/10.1149/1.1837847

Turlik, I., Reisman, A., Nayak, D., Hwang, L., Dishon, G., Jacobs, S., … Neil, M. (1994). High performance integrated circuit chip package. Washington, DC: U.S. Patent and Trademark Office.