@misc{piner_rajagopal_roberts_linthicum_2008, title={Gallium nitride material structures including substrates and methods associated with the same}, volume={7,365,374}, number={2008 Apr. 29}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Piner, E. L. and Rajagopal, P. and Roberts, J. C. and Linthicum, K. J.}, year={2008} }
 @misc{nagy_borges_brown_chaudhari_cook_hanson_johnson_linthicum_piner_rajagopal_et al._2008, title={Gallium nitride material transistors and methods associated with the same}, volume={7,352,016}, number={2008 Apr. 1}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Nagy, W. H. and Borges, R. M. and Brown, J. D. and Chaudhari, A. D. and Cook, J. W. and Hanson, A. W. and Johnson, J. W. and Linthicum, K. J. and Piner, E. L. and Rajagopal, P. and et al.}, year={2008} }
 @article{al-ajmi_kolbas_roberts_rajagopal_cook_piner_linthicum_2008, title={Stimulated emission and lasing from an Al0.13Ga0.87N/GaN double heterostructure grown on a silicon substrate}, volume={92}, number={2}, journal={Applied Physics Letters}, author={Al-Ajmi, F. S. and Kolbas, R. M. and Roberts, J. C. and Rajagopal, P. and Cook, J. W. and Piner, E. L. and Linthicum, K. J.}, year={2008} }
 @article{al-ajmi_kolbas_roberts_rajagopal_cook_piner_linthicum_2007, title={Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate}, volume={90}, number={15}, journal={Applied Physics Letters}, author={Al-Ajmi, F. S. and Kolbas, R. M. and Roberts, J. C. and Rajagopal, P. and Cook, J. W. and Piner, E. L. and Linthicum, K. J.}, year={2007} }
 @article{moody_barletta_el-masry_roberts_aumer_leboeuf_bedair_2002, title={Effect of H-2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0 <= y <= 0.08)}, volume={80}, ISSN={["0003-6951"]}, DOI={10.1063/1.1464225}, number={14}, journal={APPLIED PHYSICS LETTERS}, author={Moody, BF and Barletta, PT and El-Masry, NA and Roberts, JC and Aumer, ME and LeBoeuf, SF and Bedair, SM}, year={2002}, month={Apr}, pages={2475–2477} }
 @misc{roberts_parker_muth_leboeuf_aumer_bedair_reed_2002, title={Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 <= x <= 0.13)}, volume={31}, number={1}, journal={Journal of Electronic Materials}, author={Roberts, J. C. and Parker, C. A. and Muth, J. F. and Leboeuf, S. F. and Aumer, M. E. and Bedair, S. M. and Reed, M. J.}, year={2002}, month={Jan}, pages={L1–6} }
 @article{liliental-weber_benamara_washburn_domagala_bak-misiuk_piner_roberts_bedair_2001, title={Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies}, volume={30}, ISSN={["0361-5235"]}, DOI={10.1007/s11664-001-0056-5}, number={4}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Liliental-Weber, Z and Benamara, M and Washburn, J and Domagala, JZ and Bak-Misiuk, J and Piner, EL and Roberts, JC and Bedair, SM}, year={2001}, month={Apr}, pages={439–444} }
 @article{reed_el-masry_stadelmaier_ritums_reed_parker_roberts_bedair_2001, title={Room temperature ferromagnetic properties of (Ga, Mn)N}, volume={79}, ISSN={["1077-3118"]}, DOI={10.1063/1.1419231}, number={21}, journal={APPLIED PHYSICS LETTERS}, author={Reed, ML and El-Masry, NA and Stadelmaier, HH and Ritums, MK and Reed, MJ and Parker, CA and Roberts, JC and Bedair, SM}, year={2001}, month={Nov}, pages={3473–3475} }
 @article{el-masry_behbehani_leboeuf_aumer_roberts_bedair_2001, title={Self-assembled AlInGaN quaternary superlattice structures}, volume={79}, ISSN={["0003-6951"]}, DOI={10.1063/1.1400763}, number={11}, journal={APPLIED PHYSICS LETTERS}, author={El-Masry, NA and Behbehani, MK and LeBoeuf, SF and Aumer, ME and Roberts, JC and Bedair, SM}, year={2001}, month={Sep}, pages={1616–1618} }
 @article{reed_el-masry_parker_roberts_bedair_2000, title={Critical layer thickness determination of GaN/InGaN/GaN double heterostructures}, volume={77}, DOI={10.1063/1.1334361}, number={25}, journal={Applied Physics Letters}, author={Reed, M. J. and El-Masry, N. A. and Parker, C. A. and Roberts, J. C. and Bedair, S. M.}, year={2000}, pages={4121–4123} }
 @article{hunter_reed_el-masry_roberts_bedair_2000, title={Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation}, volume={76}, ISSN={["0003-6951"]}, DOI={10.1063/1.126217}, number={14}, journal={APPLIED PHYSICS LETTERS}, author={Hunter, ME and Reed, MJ and El-Masry, NA and Roberts, JC and Bedair, SM}, year={2000}, month={Apr}, pages={1935–1937} }
 @article{reed_liu_roberts_stadelmaier_bedair_el-masry_2000, title={The planar Hall effect in MnSb films and MnSb-based multilayer structures grown on (111)B GaAs}, volume={218}, ISSN={["0304-8853"]}, DOI={10.1016/S0304-8853(00)00403-0}, number={2-3}, journal={JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS}, author={Reed, ML and Liu, SX and Roberts, JC and Stadelmaier, HH and Bedair, SM and El-Masry, NA}, year={2000}, month={Aug}, pages={177–181} }
 @article{parker_roberts_bedair_reed_liu_el-masry_1999, title={Determination of the critical layer thickness in the InGaN/GaN heterostructures}, volume={75}, ISSN={["0003-6951"]}, DOI={10.1063/1.125146}, number={18}, journal={APPLIED PHYSICS LETTERS}, author={Parker, CA and Roberts, JC and Bedair, SM and Reed, MJ and Liu, SX and El-Masry, NA}, year={1999}, month={Nov}, pages={2776–2778} }
 @article{robins_paul_parker_roberts_bedair_piner_el-masry_1999, title={Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films}, volume={4S1}, DOI={10.1557/s1092578300002490}, number={G3.22}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Robins, L. H. and Paul, A. J. and Parker, C. A. and Roberts, J. C. and Bedair, S. M. and Piner, E. L. and El-Masry, N. A.}, year={1999} }
 @article{parker_roberts_bedair_reed_liu_el-masry_robins_1999, title={Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN}, volume={75}, ISSN={["1077-3118"]}, DOI={10.1063/1.125079}, number={17}, journal={APPLIED PHYSICS LETTERS}, author={Parker, CA and Roberts, JC and Bedair, SM and Reed, MJ and Liu, SX and El-Masry, NA and Robins, LH}, year={1999}, month={Oct}, pages={2566–2568} }
 @misc{mcintosh_bedair_el-masry_roberts_1998, title={Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flow}, volume={5,851,905}, number={1998 Dec. 22}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={McIntosh, F. G. and Bedair, S. M. and El-Masry, N. A. and Roberts, J. C.}, year={1998}, month={Dec} }
 @article{piner_behbehani_elmasry_mcintosh_roberts_boutros_bedair_1997, title={Effect of hydrogen on the indium incorporation in InGaN epitaxial films}, volume={70}, ISSN={["0003-6951"]}, DOI={10.1063/1.118181}, number={4}, journal={APPLIED PHYSICS LETTERS}, author={Piner, EL and Behbehani, MK and ElMasry, NA and McIntosh, FG and Roberts, JC and Boutros, KS and Bedair, SM}, year={1997}, month={Jan}, pages={461–463} }
 @article{mcintosh_piner_roberts_behbehani_aumer_elmasry_bedair_1997, title={Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system}, volume={112}, ISSN={["0169-4332"]}, DOI={10.1016/S0169-4332(96)00992-0}, journal={APPLIED SURFACE SCIENCE}, author={McIntosh, FG and Piner, EL and Roberts, JC and Behbehani, MK and Aumer, ME and ElMasry, NA and Bedair, SM}, year={1997}, month={Mar}, pages={98–101} }
 @article{bedair_mcintosh_roberts_piner_boutros_elmasry_1997, title={Growth and characterization of In-based nitride compounds}, volume={178}, ISSN={["0022-0248"]}, DOI={10.1016/S0022-0248(97)00069-9}, number={1-2}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Bedair, SM and McIntosh, FG and Roberts, JC and Piner, EL and Boutros, KS and ElMasry, NA}, year={1997}, month={Jun}, pages={32–44} }
 @article{piner_behbehani_elmasry_roberts_mcintosh_bedair_1997, title={Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films}, volume={71}, ISSN={["0003-6951"]}, DOI={10.1063/1.119775}, number={14}, journal={APPLIED PHYSICS LETTERS}, author={Piner, EL and Behbehani, MK and ElMasry, NA and Roberts, JC and McIntosh, FG and Bedair, SM}, year={1997}, month={Oct}, pages={2023–2025} }
 @article{joshkin_roberts_mcintosh_bedair_piner_behbehani_1997, title={Optical memory effect in GaN epitaxial films}, volume={71}, ISSN={["0003-6951"]}, DOI={10.1063/1.120414}, number={2}, journal={APPLIED PHYSICS LETTERS}, author={Joshkin, VA and Roberts, JC and McIntosh, FG and Bedair, SM and Piner, EL and Behbehani, MK}, year={1997}, month={Jul}, pages={234–236} }
 @article{zeng_smith_lin_jiang_roberts_piner_mcintosh_1997, title={Optical transitions in InGaN/AlGaN single quantum wells}, volume={15}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Zeng, K. C. and Smith, M. and Lin, J. Y. and Jiang, H. X. and Roberts, John C. and Piner, E. L. and McIntosh, F. G.}, year={1997}, pages={1139–1143} }
 @misc{mcintosh_bedair_el-masry_roberts_1997, title={Stacked quantum well aluminum indium gallium nitride light emitting diodes}, volume={5,684,309}, number={1997 Nov. 4}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={McIntosh, F. G. and Bedair, S. M. and El-Masry, N. A. and Roberts, J. C.}, year={1997}, month={Nov} }