John C. Roberts

Piner, E. L., Rajagopal, P., Roberts, J. C., & Linthicum, K. J. (2008). Gallium nitride material structures including substrates and methods associated with the same. Washington, DC: U.S. Patent and Trademark Office.

Nagy, W. H., Borges, R. M., Brown, J. D., Chaudhari, A. D., Cook, J. W., Hanson, A. W., … Vescan, A. (2008). Gallium nitride material transistors and methods associated with the same. Washington, DC: U.S. Patent and Trademark Office.

Al-Ajmi, F. S., Kolbas, R. M., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., & Linthicum, K. J. (2008). Stimulated emission and lasing from an Al0.13Ga0.87N/GaN double heterostructure grown on a silicon substrate. Applied Physics Letters, 92(2).

Al-Ajmi, F. S., Kolbas, R. M., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., & Linthicum, K. J. (2007). Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate. Applied Physics Letters, 90(15).

Moody, B. F., Barletta, P. T., El-Masry, N. A., Roberts, J. C., Aumer, M. E., LeBoeuf, S. F., & Bedair, S. M. (2002). Effect of H-2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0 <= y <= 0.08). APPLIED PHYSICS LETTERS, 80(14), 2475–2477. https://doi.org/10.1063/1.1464225

Roberts, J. C., Parker, C. A., Muth, J. F., Leboeuf, S. F., Aumer, M. E., Bedair, S. M., & Reed, M. J. (2002, January 1). Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 <= x <= 0.13).

Liliental-Weber, Z., Benamara, M., Washburn, J., Domagala, J. Z., Bak-Misiuk, J., Piner, E. L., … Bedair, S. M. (2001, April). Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies. JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 439–444. https://doi.org/10.1007/s11664-001-0056-5

Reed, M. L., El-Masry, N. A., Stadelmaier, H. H., Ritums, M. K., Reed, M. J., Parker, C. A., … Bedair, S. M. (2001). Room temperature ferromagnetic properties of (Ga, Mn)N. APPLIED PHYSICS LETTERS, 79(21), 3473–3475. https://doi.org/10.1063/1.1419231

El-Masry, N. A., Behbehani, M. K., LeBoeuf, S. F., Aumer, M. E., Roberts, J. C., & Bedair, S. M. (2001). Self-assembled AlInGaN quaternary superlattice structures. APPLIED PHYSICS LETTERS, 79(11), 1616–1618. https://doi.org/10.1063/1.1400763

Reed, M. J., El-Masry, N. A., Parker, C. A., Roberts, J. C., & Bedair, S. M. (2000). Critical layer thickness determination of GaN/InGaN/GaN double heterostructures. Applied Physics Letters, 77(25), 4121–4123. https://doi.org/10.1063/1.1334361

Hunter, M. E., Reed, M. J., El-Masry, N. A., Roberts, J. C., & Bedair, S. M. (2000). Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation. APPLIED PHYSICS LETTERS, 76(14), 1935–1937. https://doi.org/10.1063/1.126217

Reed, M. L., Liu, S. X., Roberts, J. C., Stadelmaier, H. H., Bedair, S. M., & El-Masry, N. A. (2000). The planar Hall effect in MnSb films and MnSb-based multilayer structures grown on (111)B GaAs. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 218(2-3), 177–181. https://doi.org/10.1016/S0304-8853(00)00403-0

Parker, C. A., Roberts, J. C., Bedair, S. M., Reed, M. J., Liu, S. X., & El-Masry, N. A. (1999). Determination of the critical layer thickness in the InGaN/GaN heterostructures. APPLIED PHYSICS LETTERS, 75(18), 2776–2778. https://doi.org/10.1063/1.125146

Robins, L. H., Paul, A. J., Parker, C. A., Roberts, J. C., Bedair, S. M., Piner, E. L., & El-Masry, N. A. (1999). Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.22). https://doi.org/10.1557/s1092578300002490

Parker, C. A., Roberts, J. C., Bedair, S. M., Reed, M. J., Liu, S. X., El-Masry, N. A., & Robins, L. H. (1999). Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN. APPLIED PHYSICS LETTERS, 75(17), 2566–2568. https://doi.org/10.1063/1.125079

McIntosh, F. G., Bedair, S. M., El-Masry, N. A., & Roberts, J. C. (1998). Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flow. Washington, DC: U.S. Patent and Trademark Office.

Piner, E. L., Behbehani, M. K., ElMasry, N. A., McIntosh, F. G., Roberts, J. C., Boutros, K. S., & Bedair, S. M. (1997). Effect of hydrogen on the indium incorporation in InGaN epitaxial films. APPLIED PHYSICS LETTERS, 70(4), 461–463. https://doi.org/10.1063/1.118181

McIntosh, F. G., Piner, E. L., Roberts, J. C., Behbehani, M. K., Aumer, M. E., ElMasry, N. A., & Bedair, S. M. (1997, March). Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system. APPLIED SURFACE SCIENCE, Vol. 112, pp. 98–101. https://doi.org/10.1016/S0169-4332(96)00992-0

Bedair, S. M., McIntosh, F. G., Roberts, J. C., Piner, E. L., Boutros, K. S., & ElMasry, N. A. (1997). Growth and characterization of In-based nitride compounds. JOURNAL OF CRYSTAL GROWTH, 178(1-2), 32–44. https://doi.org/10.1016/S0022-0248(97)00069-9

Piner, E. L., Behbehani, M. K., ElMasry, N. A., Roberts, J. C., McIntosh, F. G., & Bedair, S. M. (1997). Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films. APPLIED PHYSICS LETTERS, 71(14), 2023–2025. https://doi.org/10.1063/1.119775

Joshkin, V. A., Roberts, J. C., McIntosh, F. G., Bedair, S. M., Piner, E. L., & Behbehani, M. K. (1997). Optical memory effect in GaN epitaxial films. APPLIED PHYSICS LETTERS, 71(2), 234–236. https://doi.org/10.1063/1.120414

Zeng, K. C., Smith, M., Lin, J. Y., Jiang, H. X., Roberts, J. C., Piner, E. L., & McIntosh, F. G. (1997). Optical transitions in InGaN/AlGaN single quantum wells. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1139–1143.

McIntosh, F. G., Bedair, S. M., El-Masry, N. A., & Roberts, J. C. (1997). Stacked quantum well aluminum indium gallium nitride light emitting diodes. Washington, DC: U.S. Patent and Trademark Office.