Works (18)

2004 patent

Passivated silicon carbide devices with low leakage current and method of fabricating

Washington, DC: U.S. Patent and Trademark Office.

By: D. Alok & E. Arnold

Source: NC State University Libraries
Added: August 6, 2018

2004 patent

Silicon carbide schottky barrier diode and method of making

Washington, DC: U.S. Patent and Trademark Office.

By: D. Alok

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor

Washington, DC: U.S. Patent and Trademark Office.

By: D. Alok, E. Arnold, R. Egloff & S. Mukherjee

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Silicon carbide lateral metal-oxide semiconductor field-effect transistor having a self-aligned drift region and method for forming the same

Washington, DC: U.S. Patent and Trademark Office.

By: D. Alok & R. Jos

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Superior silicon carbide integrated circuits and method of fabricating

Washington, DC: U.S. Patent and Trademark Office.

By: D. Alok

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices

Washington, DC: U.S. Patent and Trademark Office.

By: D. Alok

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

Passivated silicon carbide devices with low leakage current and method of fabricating

Washington, DC: U.S. Patent and Trademark Office.

By: D. Alok & E. Arnold

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

Silicon carbide LMOSFET with gate reach-through protection

Washington, DC: U.S. Patent and Trademark Office.

By: D. Alok

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Self-aligned silicon carbide LMOSFET

Washington, DC: U.S. Patent and Trademark Office.

By: D. Alok

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Superior silicon carbide integrated circuits and method of fabricating

Washington, DC: U.S. Patent and Trademark Office.

By: D. Alok

Source: NC State University Libraries
Added: August 6, 2018

2000 patent

Lateral silicon carbide semiconductor device having a drift region with a varying doping level

Washington, DC: U.S. Patent and Trademark Office.

By: D. Alok, S. Mukherjee & E. Arnold

Source: NC State University Libraries
Added: August 6, 2018

2000 patent

Method of forming a laterally-varying charge profile in silicon carbide substrate

Washington, DC: U.S. Patent and Trademark Office.

By: D. Alok, N. Taskar & T. Letavic

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Kinetics of enhanced thermal oxidation of silicon carbide using amorphization by ion implantation

Journal of the Electrochemical Society, 144(3), 1135–1137.

By: D. Alok & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1997 patent

Methods of fabricating voltage breakdown resistant monocrystalline silicon carbide semiconductor devices

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga & D. Alok

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

SIC device edge termination using finite area argon implantation

IEEE Transactions on Electron Devices, 44(6), 1013–1017.

By: D. Alok & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Method for forming a p-n junction in silicon carbide

Baliga, B. J., Alok, D., & Bhatnagar, M. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga, D. Alok & M. Bhatnagar

Source: NC State University Libraries
Added: August 6, 2018

patent

Method of forming trenches in monocrystalline silicon carbide

Baliga, B. J., & Alok, D. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga & D. Alok

Source: NC State University Libraries
Added: August 6, 2018

patent

Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices

Baliga, B. J., & Alok, D. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga & D. Alok

Source: NC State University Libraries
Added: August 6, 2018