Works (18)
2004 patent
Passivated silicon carbide devices with low leakage current and method of fabricating
Washington, DC: U.S. Patent and Trademark Office.
2004 patent
Silicon carbide schottky barrier diode and method of making
Washington, DC: U.S. Patent and Trademark Office.
2003 patent
Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor
Washington, DC: U.S. Patent and Trademark Office.
2003 patent
Silicon carbide lateral metal-oxide semiconductor field-effect transistor having a self-aligned drift region and method for forming the same
Washington, DC: U.S. Patent and Trademark Office.
2003 patent
Superior silicon carbide integrated circuits and method of fabricating
Washington, DC: U.S. Patent and Trademark Office.
2002 patent
Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices
Washington, DC: U.S. Patent and Trademark Office.
2002 patent
Passivated silicon carbide devices with low leakage current and method of fabricating
Washington, DC: U.S. Patent and Trademark Office.
2002 patent
Silicon carbide LMOSFET with gate reach-through protection
Washington, DC: U.S. Patent and Trademark Office.
2001 patent
Self-aligned silicon carbide LMOSFET
Washington, DC: U.S. Patent and Trademark Office.
2001 patent
Superior silicon carbide integrated circuits and method of fabricating
Washington, DC: U.S. Patent and Trademark Office.
2000 patent
Lateral silicon carbide semiconductor device having a drift region with a varying doping level
Washington, DC: U.S. Patent and Trademark Office.
2000 patent
Method of forming a laterally-varying charge profile in silicon carbide substrate
Washington, DC: U.S. Patent and Trademark Office.
1997 journal article
Kinetics of enhanced thermal oxidation of silicon carbide using amorphization by ion implantation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(3), 1135–1137.
1997 patent
Methods of fabricating voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
Washington, DC: U.S. Patent and Trademark Office.
1997 journal article
SiC device edge termination using finite area argon implantation
IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(6), 1013–1017.
patent
Method for forming a p-n junction in silicon carbide
Baliga, B. J., Alok, D., & Bhatnagar, M. Washington, DC: U.S. Patent and Trademark Office.
patent
Method of forming trenches in monocrystalline silicon carbide
Baliga, B. J., & Alok, D. Washington, DC: U.S. Patent and Trademark Office.
patent
Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
Baliga, B. J., & Alok, D. Washington, DC: U.S. Patent and Trademark Office.