Works (18)
2004 patent
Passivated silicon carbide devices with low leakage current and method of fabricating
Washington, DC: U.S. Patent and Trademark Office.
2004 patent
Silicon carbide schottky barrier diode and method of making
Washington, DC: U.S. Patent and Trademark Office.
2003 patent
Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor
Washington, DC: U.S. Patent and Trademark Office.
2003 patent
Silicon carbide lateral metal-oxide semiconductor field-effect transistor having a self-aligned drift region and method for forming the same
Washington, DC: U.S. Patent and Trademark Office.
2003 patent
Superior silicon carbide integrated circuits and method of fabricating
Washington, DC: U.S. Patent and Trademark Office.
2002 patent
Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices
Washington, DC: U.S. Patent and Trademark Office.
2002 patent
Passivated silicon carbide devices with low leakage current and method of fabricating
Washington, DC: U.S. Patent and Trademark Office.
2002 patent
Silicon carbide LMOSFET with gate reach-through protection
Washington, DC: U.S. Patent and Trademark Office.
2001 patent
Self-aligned silicon carbide LMOSFET
Washington, DC: U.S. Patent and Trademark Office.
2001 patent
Superior silicon carbide integrated circuits and method of fabricating
Washington, DC: U.S. Patent and Trademark Office.
2000 patent
Lateral silicon carbide semiconductor device having a drift region with a varying doping level
Washington, DC: U.S. Patent and Trademark Office.
2000 patent
Method of forming a laterally-varying charge profile in silicon carbide substrate
Washington, DC: U.S. Patent and Trademark Office.
1997 article
Kinetics of Enhanced Thermal Oxidation of Silicon Carbide Using Amorphization by Ion Implantation
Alok, D., & Baliga, B. J. (1997, March 1). Journal of The Electrochemical Society.
1997 patent
Methods of fabricating voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
Washington, DC: U.S. Patent and Trademark Office.
1997 article
SiC device edge termination using finite area argon implantation
Alok, D., & Baliga, B. J. (1997, June 1). IEEE Transactions on Electron Devices.
patent
Method for forming a p-n junction in silicon carbide
Baliga, B. J., Alok, D., & Bhatnagar, M. Washington, DC: U.S. Patent and Trademark Office.
patent
Method of forming trenches in monocrystalline silicon carbide
Baliga, B. J., & Alok, D. Washington, DC: U.S. Patent and Trademark Office.
patent
Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
Baliga, B. J., & Alok, D. Washington, DC: U.S. Patent and Trademark Office.