Dev Alok

Passivated silicon carbide devices with low leakage current and method of fabricating

Washington, DC: U.S. Patent and Trademark Office.

Silicon carbide schottky barrier diode and method of making

Washington, DC: U.S. Patent and Trademark Office.

Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor

Washington, DC: U.S. Patent and Trademark Office.

Silicon carbide lateral metal-oxide semiconductor field-effect transistor having a self-aligned drift region and method for forming the same

Washington, DC: U.S. Patent and Trademark Office.

Superior silicon carbide integrated circuits and method of fabricating

Washington, DC: U.S. Patent and Trademark Office.

Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices

Washington, DC: U.S. Patent and Trademark Office.

Passivated silicon carbide devices with low leakage current and method of fabricating

Washington, DC: U.S. Patent and Trademark Office.

Silicon carbide LMOSFET with gate reach-through protection

Washington, DC: U.S. Patent and Trademark Office.

Self-aligned silicon carbide LMOSFET

Washington, DC: U.S. Patent and Trademark Office.

Superior silicon carbide integrated circuits and method of fabricating

Washington, DC: U.S. Patent and Trademark Office.

Lateral silicon carbide semiconductor device having a drift region with a varying doping level

Washington, DC: U.S. Patent and Trademark Office.

Method of forming a laterally-varying charge profile in silicon carbide substrate

Washington, DC: U.S. Patent and Trademark Office.

Kinetics of enhanced thermal oxidation of silicon carbide using amorphization by ion implantation

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(3), 1135–1137.

Methods of fabricating voltage breakdown resistant monocrystalline silicon carbide semiconductor devices

Washington, DC: U.S. Patent and Trademark Office.

SiC device edge termination using finite area argon implantation

IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(6), 1013–1017.

Method for forming a p-n junction in silicon carbide

Baliga, B. J., Alok, D., & Bhatnagar, M. Washington, DC: U.S. Patent and Trademark Office.

Method of forming trenches in monocrystalline silicon carbide

Baliga, B. J., & Alok, D. Washington, DC: U.S. Patent and Trademark Office.

Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices

Baliga, B. J., & Alok, D. Washington, DC: U.S. Patent and Trademark Office.